Journal of Inorganic Materials
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CHANG Yong-Qin; AN Wei-Jun; GUO Xi-Ping; JIE Wan-Qi
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Abstract: Diluted magnetic semiconductor MnxCd1-xIn2Te4(x=0.1, 0.22 and 0.4) ingots were grown by the Bridgman method. The structure and composition of different phases and the compositional distribution along the axis and radius of the MnxCd1-xIn2Te4 ingot were analyzed. α+β+β1 structures are formed at the tip of the MnxCd1-xIn2Te4 ingots. Among them, α and β phases are crystallized from the melt while β1 is precipitated from α phase when temperature is below solidus. The content of β phase increases with the growth process, and finally, a pure β phase-region is formed. At the end of the ingots, an In2Te3-type phase with a fcc structure is crystallized. There exist two distinct interfaces between the different neighbouring phase-regions. The band gap of MnxCd1-xIn2Te4 shifts towards the high energy side with the increase of x. At higher temperatures(50~300K) the variation of magnetic susceptibility χ with T in MnxCd1-xIn2Te4 follows the Curie-Weiss (C-W) law. However, a paramagnetic behavior exists at lower temperature (<50K). The antiferromagnetic exchange of Mn2+ increases with the composition, x.
Key words: MnxCd1-xIn2Te4, compositional distribution, infrared transmission spectra, mag- netic susceptibility
CLC Number:
O781
CHANG Yong-Qin,AN Wei-Jun,GUO Xi-Ping,JIE Wan-Qi. Phase Formation and Physical Properties of MnxCd1-XIn2Te4 Ingots Grown by the Bridgman Method[J]. Journal of Inorganic Materials.
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https://www.jim.org.cn/EN/Y2003/V18/I2/275