Journal of Inorganic Materials

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Phase Formation and Physical Properties of MnxCd1-XIn2Te4 Ingots Grown by the Bridgman Method

CHANG Yong-Qin; AN Wei-Jun; GUO Xi-Ping; JIE Wan-Qi   

  1. State Key Laboratory of Solidification Processing; Northwestern Polytechnical University; Xi an 710072; China
  • Received:2002-01-10 Revised:2002-03-04 Published:2003-03-20 Online:2003-03-20

Abstract: Diluted magnetic semiconductor MnxCd1-xIn2Te4(x=0.1, 0.22 and 0.4) ingots were grown by the Bridgman method. The structure and composition of different
phases and the compositional distribution along the axis and radius of the MnxCd1-xIn2Te4 ingot were analyzed. α+β+β1
structures are formed at the tip of the MnxCd1-xIn2Te4 ingots. Among them, α and β phases are crystallized from the melt while β1
is precipitated from α phase when temperature is below solidus. The content of β phase increases with the growth process, and finally, a pure β phase-region
is formed. At the end of the ingots, an In2Te3-type phase with a fcc structure is crystallized. There exist two distinct interfaces between the different neighbouring
phase-regions. The band gap of MnxCd1-xIn2Te4 shifts towards the high energy side with the increase of x. At higher temperatures(50~300K) the variation of
magnetic susceptibility χ with T in MnxCd1-xIn2Te4 follows the Curie-Weiss (C-W) law. However, a paramagnetic behavior exists at lower temperature (<50K).
The antiferromagnetic exchange of Mn2+ increases with the composition, x.

Key words: MnxCd1-xIn2Te4, compositional distribution, infrared transmission spectra, mag- netic susceptibility

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