[1] Utech H P, Flemings M C. J. Appl. Phys., 1966, 37: 2021--2024. [2] Chedzey A, Hurle D T J. Nature, 1966, 210: 933--934. [3] Wakayama Nobuko I, Mitsuo Ataka, Haruo Abe. J. Cryst. Growth, 1997, 178: 653--656. [4] Croll A, Szofran F R, Dold P, et al. J. Cryst. Growth, 1998, 183: 554--563. [5] Kim K M, Smetana P. J. Appl. Phys., 1985, 58: 2731--2375. [6] Witt A F, Herman C J, Gatos H C. J. Mater. Sci., 1970, 5: 822--827. [7] Series R W. J. Cryst. Growth, 1989, 97: 92--98. [8] Hirata H, Hoshikawa K. J. Cryst. Growth, 1989, 96: 747--755. [9] Dold P, Benz K W. Cryst. Res. Technol., 1997, 32 (1): 51--56. [10] Wakayama Nobuko I. J. Cryst. Growth, 1998, 191: 199--205. [11] 金蔚青,袁晖,潘志雷等(JIN Wei-Qing, et al). 无机材料学报(Journal of Inorganic Materials), 1999, 14 (1): 155--1608. [12] Miyazawa Yasuto, Morita Shoji, Sekiwa Hideyuki. J. Cryst. Growth, 1996, 166: 286--290. [13] Hoshikawa K. Japan. J. Appl. Phys., 1982, 21: L545--547. [14] Hirta H, Inuoe N. Japan. J. Appl. Phys., 1984, 23 (8): L527--530. [15] Hoshikawa H, Kohda H, Hirata H. Japan. J. Appl. Phys., 1984, 23: L37--39. [16] Thomas R N, Hobgood H M, Ravishankar P S, et al. J. Cryst. Growth, 1990, 99: 643--653. [17] Ravishankar P S, Braggins T T, Thomas R W. J. Cryst. Growth, 1990, 104: 617--628. [18] Hurle D T J, Series R W. J. Cryst. Growth, 1985, 73: 1--9. [19] Dold P, Croll A, Benz K W. J. Cryst. Growth, 1998, 183: 545. [20] Suzuki T, Isawa N, Okubo Y, et al. In: Huff H R, Krigler R J, Takeishi Y ed. Semiconductor silicon 1981. Pennington NJ: Electrochem Soc. Inc., 1981. 90--100. [21] Hoshi K, Isaswa N, Suzuki T, et al. J. Electrochem. Soc., 1985, 132: 693--700. [22] Sabhapathy P, Salcudean M E. J. Cryst. Growth, 1991, 113: 164--180. [23] Terashima K, Fukuda T. J. Cryst. Growth, 1983, 63: 423--425. [24] Terashima K, Yahata A, Fukuda T. J. Appl. Phys., 1986, 59: 982--984. [25] Series R W, Hurle D T J. J. Cryst. Growth, 1991, 112: 305--328. [26] Kimura T, Katsumta T, Nakajima M, et al. J. Cryst. Growth, 1986, 79: 264--270. [27] Park Young Ju, Min Suk ki, Hahn Seung Ho, et al. J. Cryst. Growth, 1995, 154: 10--18. [28] Miyairi H, Inada T, Eguchi M, et al. J. Cryst. Growth, 1986, 79: 291--295. [29] Satoh T, Hashimoto I, Sakaguchi Y. In: Hakone, Kukimoto H, Niyazowa S, ed. Semi-insulating III-IV Materials 1986. Tokyo:ohmsha/Amsterdam:NorthHolland, 1986. 326--331. [30] Mosel Hofmann D, Muller G. In: Grosmann G, Ledebo L. ed. Semi-insulating III-IV materials 1988. Bristol: Hilger, 1988. 429--435. |