Structural Characteristics of Amorphous Er2O3 Films Grown on Si (001) by Reactive Evaporation

doi:10.3724/SP.J.1077.2008.00357

Abstract

Abstract: High k dielectric Er₂O₃ were deposited on p-type Si (100) substrates by reactive evaporation using metallic Er source at room temperature in an oxygen atmosphere. The composition of the films is determined to be stoichiometric. X-ray diffraction, reflection high energy electron diffraction and high resolution transmission electron microscopy tests reveal
that the films are amorphous even after thermal annealing at 700℃. The films have very flat surface after high temperature annealing. The dielectric constant of Er₂O₃ films is 12.6, an effective oxide thickness of 1.4nm is achieved, with a low leakage current density of 8×10^-4 A/cm² at electric field of 1MV/cm after annealing. The obtained results indicate that the amorphous Er₂O₃ film is a promising candidate for high k gate dielectric in Si microelectronic devices.

Key words: high k dielectric film, Er₂O₃, reactive evaporation

CLC Number:

O484

FANG Ze-Bo,TAN Yong-Sheng,ZHU Yan-Yan,CHEN Sheng,JIANG Zui-Min. Structural Characteristics of Amorphous Er₂O₃ Films Grown on Si (001) by Reactive Evaporation[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.00357.

References

[1] Yan Z J, Xu R, Wang Y Y, et al. Appl. Phys. Lett., 2004, 85 (1): 85--87.
[2] Harris H, Choi K, Mehta N, et al. Appl. Phys. Lett., 2002, 81 (6): 1065--1067.
[3] Sayan S, Nguyen N V, Ehrstein J, et al. Appl. Phys. Lett., 2005, 86 (15): 152902--1--3.
[4] Zhu L Q, Fang Q, He G, et al. Nanotechnology, 2005, 16 (12): 2865--2869.
[5] Klein T M, Niu D, Epling W S, et al. Appl. Phys. Lett., 1999, 75 (25): 4001--4003.
[6] 王东生, 于涛, 游彪, 等(WANG Dong-Sheng, et al). 无机材料学报(Journal of Inorganic Materials), 2003, 18 (1): 229--232.
[7] Hunter M E, Reed M J, El-masry N A, et al. Appl. Phys. Lett., 2000, 76 (14): 1935--1937.
[8] Ioannou-Sougleridis V, Vellianitis G, Dimoulas A. J. Appl. Phys., 2003, 93 (7): 3982--3989.
[9] Lippert G, Dabrowski J, Melnik V, et al. Appl. Phys. Lett., 2005, 86 (14): 042902--042904.
[10] Nigro R Lo, Toro R G, Malandrino G, et al. Adv. Mater., 2003, 15 (13): 1071--1075.
[11] Zhu Y Y, Chen S, Xu R, et al. Appl. Phys. Lett., 2006, 88 (16): 162909--162911.
[12] Ono H, Katsumata T. Appl. Phys. Lett., 2001, 78 (13): 1832--1834.
[13] Singh M P, Thakur C S, Shalini K, et al. Appl. Phys. Lett., 2003, 83 (14): 2889--2891.
[14] Mikhelashvili V, Eisenstein G, Edelmann F. Appl. Phys. Lett., 2002, 80 (12): 2156--2158.
[15] Mikhelashvili V, Eisenstein G, Edelmann F. J. Appl. Phys., 2001, 90 (10): 5447--5449.
[16] Mikhelashvili V, Eisenstein G, Edelmann F, et al. J. Appl. Phys., 2004, 95 (2): 613--620.
[17] Chen S, Zhu Y Y, et al. Appl. Phys. Lett., 2006, 88 (22): 222902--1--3.
[18] Xu R, Zhu Y Y, Chen S, et al. J. Cryst. Growth, 2005, 277 (1--4): 496--501.
[19] 李驰平, 王波, 宋雪梅, 等. 材料导报, 2006, 20 (2): 17--25.
[20] Muller D A, Sorsch T, Moccio S, et al. Nature, 1999, 399 (6738): 758--761.
[21] Dimoulas A, Vellianitis G, Travlos A, et al. J. Appl. Phys., 2002, 92 (1): 426--431.
[22] He G, Liu M, Zhu L Q, et al. Surface Science, 2005, 576 (1--3): 67--75.

Structural Characteristics of Amorphous Er₂O₃ Films Grown on Si (001) by Reactive Evaporation

PDF (PC)

Knowledge

Cited

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments

[1]	SHEN Bin, ZHANG Xu, XIONG Huai, LI Haiyuan, XIE Xinglong. Preparation and Optical Properties of Sol-Gel SiO₂ Antireflective Films [J]. Journal of Inorganic Materials, 2024, 39(5): 525-530.
[2]	YANG Zhiliang, YANG Ao, LIU Peng, CHEN Liangxian, AN Kang, WEI Junjun, LIU Jinlong, WU Lishu, LI Chengming. Preparation of 3-inch Diamond Film on Silicon Substrate for Thermal Management [J]. Journal of Inorganic Materials, 2024, 39(3): 283-290.
[3]	CHAN Siyi, TU Juping, HUANG Ke, SHAO Siwu, YANG Zhiliang, LIU Peng, LIU Jinlong, CHEN Liangxian, WEI Junjun, AN Kang, ZHENG Yuting, LI Chengming. Uniform Growth of Two-inch MPCVD Optical Grade Diamond Film [J]. Journal of Inorganic Materials, 2023, 38(12): 1413-1419.
[4]	LIN Junliang, WANG Zhanjie. Research Progress on Ferroelectric Superlattices [J]. Journal of Inorganic Materials, 2023, 38(6): 606-618.
[5]	ZHONG Xiaolan, LIU Xueqing, DIAO Xungang. Electrochromic Devices Based on Tungsten Oxide and Nickel Oxide: a Review [J]. Journal of Inorganic Materials, 2021, 36(2): 128-139.
[6]	SUN Ding, DING Yanyan, KONG Lingwei, ZHANG Yuhong, GUO Xiujuan, WEI Liming, ZHANG Li, ZHANG Lixin. First-principles Study on Mg Doping in Cu₂ZnSnS₄ [J]. Journal of Inorganic Materials, 2020, 35(11): 1290-1294.
[7]	XIAO Min, SUN Rui-Zhi, LI Yan-Fang, KANG Tong-Tong, QIN Jun, YANG Run, BI Lei. Transfer Printing of VO₂Thin Films Using MoS₂/SiO₂ van der Waals Heterojunctions [J]. Journal of Inorganic Materials, 2019, 34(11): 1161-1166.
[8]	ZHANG Cong, KANG Chao-Yang, ZONG Hai-Tao, LI Ming, LIANG Shan-Shan, CAO Guo-Hua. Stress Induced Modulation of the Structure and Photoelectric Property of Vanadium Oxide Films on Sapphire Substrate [J]. Journal of Inorganic Materials, 2018, 33(11): 1225-1231.
[9]	ZHAO Hui-Yue, WANG Xiao-Dong, FENG Jian-Bin, LIU Yuan, HUANG Ji-Chen, SHEN Jun. Environmental Stable SiO₂Antireflective Coating Modified via NH₃/HTMS Vapor Phase Treatment [J]. Journal of Inorganic Materials, 2018, 33(11): 1219-1224.
[10]	SONG Jian-Min, DAI Xiu-Hong, LIANG Jie-Tong, ZHAO Lei, ZHOU Yang, GE Da-Yong, MENG Xu-Dong, LIU Bao-Ting. Resistive Switching Effect and Dielectric Property of Epitaxial BiFeO₃ Thin Films by Off-axis Magnetron Sputtering [J]. Journal of Inorganic Materials, 2018, 33(9): 1017-1021.
[11]	FU Chao-Li, YANG Yong, MA Yun-Feng, WEI Yu-Quan, JIAO Zheng, HUANG Zheng-Ren. APS Bias Voltage on Properties of HfO₂ Laser Films Deposited by Reactive Plasma Ion Assisted Electron Evaporation [J]. Journal of Inorganic Materials, 2017, 32(1): 69-74.
[12]	NIU Yan-Yan, WANG Xiao-Dong, YAO Lan-Fang, TIAN Bing-Tao, FENG Jian-Bin, CAO Yuan-Yuan, ZHANG Qing-Hua, SHEN Jun. Preparation of Octyltrimethoxysilane Modified SiO₂ Hydrophobic Antireflective Coating [J]. Journal of Inorganic Materials, 2016, 31(5): 499-504.
[13]	ZHANG Zhi-Ping, LIU Hong-Fei, PAN Kun-Min, CHEN Xiao-Bing, ZENG Xiang-Hua. Synthesis of Negative Thermal Expansion Sc₂W₃O₁₂ Thin Film [J]. Journal of Inorganic Materials, 2015, 30(12): 1278-1282.
[14]	CHEN Xiao-Bo, YANG Wen, DUAN Liang-Fei, ZHANG Li-Yuan, YANG Pei-Zhi. Microstructure and Luminous Property of Periodical Gradient Si-rich SiN_x Thin Films [J]. Journal of Inorganic Materials, 2014, 29(12): 1270-1274.
[15]	JIANG Jin-Long, WANG Qiong, HUANG Hao, ZHANG Xia, WANG Yu-Bao, GENG Qing-Fen. Microstructure Evolution Induced by Ultraviolet Light Irradiation in Ti-Si Codoped Diamond-like Carbon films [J]. Journal of Inorganic Materials, 2014, 29(9): 941-946.