Journal of Inorganic Materials

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Growth of CeO2:Bi12SiO20 Crystals in the Multi-Position Furnace

ZHOU Yan-Fei; TANG Lian-An; ZHU Jun-Xiong   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China
  • Received:2001-02-16 Revised:2001-03-21 Published:2002-03-20 Online:2002-03-20

Abstract: Bi12SiO20 single crystals exhibit excellent photorefractive behavior. The main problem in growing doped Ce:BSO crystals on earth is low segregation coefficients that result in a poor chemical homogeneity of the crystals. In our experiments, Ce:BSO crystals were grown on earth in the multi-position furnace especially designed for growing single crystals in space. The dopant distribution and transmission spectra of Ce:BSO grown on earth were measured and compared with that of Ce:BSO crystals grown in space.

Key words: doped cerium bismuth silicon oxides (Ce:BSO), crystal growth, multi-position furnace

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