Crystal Structure and Microwave Dielectric Property of Ba1-xMgxAl2Si2O8

doi:10.15541/jim20160272

Abstract

Abstract:

Barium feldspar BaO-Al₂O₃-SiO₂ system materials have been studied extensively for application in microwave devices, microwave substrate and packaging in recent years, due to their remarkable dielectric properties. The hexacelsian-celsian transition, relationship between dielectric properties, and structure of BaO-Al₂O₃-SiO₂ system has attracted widely academic interest. Ba_1-_xMg_xAl₂Si₂O₈ (x=0, 0.05, 0.1, 0.15, 0.3, 0.5) ceramics were prepared by solid state sintering processing. The crystal structure and microwave dielectric properties of BaO-Al₂O₃-SiO₂ with different MgO contents were studied. The results show that MgO doping reduces sintering temperature and greatly promotes the transition from hexacelisian to celsian at x≥0.15, while the transition reachs 100%. MgO doping effectively increases grain size at x≤0.15. The diffraction peak of celsian is enhanced and the grain size gets larger. Moreover, the density, dielectric constant andτ_f of Ba_1-_xMg_xAl₂Si₂O₈ ceramics increases with the increase of MgO content in the range of 0.05≤x≤0.1. In addition, the resonant frequency temperature coefficient is negative. The Ba_0.9Mg_0.1Al₂Si₂O₈ sintered at 1400℃ exhibits a high Q×f value of 16461 GHz, ε_r=6.44 and τ_f= -30.6×10^-6K^-1 at x=0.1. The dielectric constant of Ba_1-_xMg_xAl₂Si₂O₈ ceramics is related with its Mg²⁺ polarizability and its structure. The effect of electronegativity, the size of ions and the crystal structure on Q×f value of Ba_1-_xMg_xAl₂Si₂O₈ ceramics are also discussed.

Key words: magnesium oxide, feldspar, celsian, crystal structure, microwave dielectric properties

CLC Number:

TQ174

ZHANG Yao, DING Shi-Hua, LIU Yang-Qiong, DUAN Shao-Ying, XIAO Peng, HAN Lin-Cai. Crystal Structure and Microwave Dielectric Property of Ba_1-_xMg_xAl₂Si₂O₈[J]. Journal of Inorganic Materials, 2017, 32(1): 91-95.

Figures/Tables 8

Fig. 1 Relationship between density and sintering temperature of the Ba1-xMgxAl2Si2O8

Table 1 Sintering conditions of the samples Ba1-xMgxAl2Si2O8 with different MgO amounts

Ba_1-_xMg_x Al₂Si₂O₈	Sintering temperature/℃		Main crystalline phase
x=0	1400	2.8929	Hexacelsian
x=0.05	1400	2.9129	Celsian
x=0.1	1400	2.9889	Celsian
x=0.15	1375	2.9556	Celsian
x=0.3	1375	2.9385	Celsian
x=0.5	1350	2.6964	Celsian

Fig. 2 XRD patterns of the Ba1-xMgxAl2Si2O8 samples

Table 2 Lattice constant and unit cell volume of the Ba1-xMgxAl2Si2O8 samples with different MgO amounts

Ba_1-_xMg_xAl₂Si₂O₈	a/nm	b/nm	c/nm	V/nm³
x=0 (Hexacelsian)	0.530506	0.530506	0.779730	0.19004
x=0.05(Celsian)	0.864706	1.304903	0.722291	0.74016
x=0.1 (Celsian)	0.865584	1.306700	0.721656	0.73998
x=0.15(Celsian)	0.861000	1.302623	0.718374	0.73038
x=0.3 (Celsian)	0.863250	1.305660	0.720369	0.73588
x=0. 5(Celsian)	0.866638	1.305692	0.722445	0.73898

Fig. 3 SEM images of the samples with different MgO amounts(a) x=0; (b) x=0.05; (c) x=0.1; (d) x=0.15; (e) x=0.3; (f) x=0.5

Fig. 4 Dielectric constant of the samples Ba1-xMgxAl2Si2O8 with different MgO amounts

Fig. 5 Q×f of the samples Ba1-xMgxAl2Si2O8 with different MgO amounts

Fig. 6 τf of the sample Ba1-xMgxAl2Si2O8 with different MgO amounts

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Crystal Structure and Microwave Dielectric Property of Ba_1-_xMg_xAl₂Si₂O₈

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