Journal of Inorganic Materials

• Research Paper • Previous Articles     Next Articles

Investigation of Structural and Physical Properties of Pt/Pb(Zr 0.4 Ti 0.6 )O3/ITO Capacitors Fabricated on Glass Substrate

ZHOU Yang1, CHENG Chun-Sheng1, ZHAO Jing-Wei1, ZHENG Hong-Fang2,
ZHAO Qing-Xun1, PENG Ying-Cai3, LIU Bao-Ting1   

  1. 1. College of Physics Science and Technology,Hebei University, Baoding 071002, China; 2. Baoding University, Baoding 071000, China; 3. College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
  • Received:2009-07-14 Revised:2009-10-15 Published:2010-03-20 Online:2010-03-20

Abstract: Pt/Pb(Zr0.4Ti0.6)O3 (PZT)/ITO capacitors were fabricated on glass substrate, where PZT film was prepared by solgel method. The structural and physical properties of Pt/PZT/ITO capacitors were investigated. The microstructural, electrical and optical properties of Pt/PZT/ITO capacitors were characterized by Xray diffraction (XRD), ferroelectric tester, UVspectrophotometer, respectively. It is found that PZT is highly (101) oriented and well crystallized. Ferroelectric measurements indicate that Pt/PZT/ITO capacitor, measured at 5V, possesses good ferroelectric properties, such as fatiguefree characteristics, retention characteristics, large remnant polarization (41.7μC/cm2 ) and high resistivity (2.5×109Ω·cm). The analysis of the leakage current mechanism indicates that Pt/PZT/ITO capacitor showes Ohmiclike behaviour at low voltages (<0.8V) and Schottky emission at high voltages (>0.8V). From the optical measurement, stronger absorption in shortwave and stronger transmission in longwave range are observed. The maximum value of transmission reaches 95%.

Key words: Pt/PZT/ITO, sol-gel method, electric property

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