Properties of Highly Oriented Transparent KTN/SiO_2 (100) Film Prepared by PLD

Abstract

Abstract: Highly oriented KTN thin films were produced on the transparent single crystal quartz (100) by the pulsed laser deposition (PLD). XRD analysis indicates that perovskite structure with (h00) orientation
is the major phase (>98%) in KTN. The optical and electric measurements show that the remanent polarization and the coercive field are 9.25μC/cm² and 7.32kV/cm, refractive index 1.776 at
incident wave length 1.2μm, thickness 968nm, and growth rate 0.027 nm per pulse. The Current-Voltage characteristics found are Ohmic at lower fields and space-charge-limited at higher fields. This phenomenon
was reasonably explained by SCLC theory. The leakage current is lower than 250μA/mm² at 0--5V, which shows the film has good electric performances. The results of the frequency dependence
of dielectric constant demonstrate that the dispersion of electric capacity is large at low frequency but small at high frequency. The dielectric constant is 12600 and the loss tangent is 0.04 at the frequency of 10 kHz.

Key words: PLD, KTN film, single crystal quartz

CLC Number:

TB43

WANG Xiao-Dong,PENG Xiao-Feng,ZHANG Duan-Ming. Properties of Highly Oriented Transparent KTN/SiO_₂ (100) Film Prepared by PLD[J]. Journal of Inorganic Materials.

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Properties of Highly Oriented Transparent KTN/SiO_₂ (100) Film Prepared by PLD

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