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Journal of Inorganic Materials

Journal of Inorganic Materials

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Study on the “Negative” Resistance Switching Properties in
Ti/La0.7Ca0.3MnO3/Pt Sandwiches Devices

LIU Xin-Jun1, LI Xiao-Min1, WANG Qun1, YANG Rui1, 2, CAO Xun1, 2, CHEN Li-Dong1   

  1. (1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Graduate University of the Chinese Academy of Science, Beijing 100049, China)
  • Received:2009-06-22 Revised:2009-08-27 Published:2010-02-20 Online:2010-02-20

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Abstract: The La0.7Ca0.3MnO3 (LCMO) thin films with resistive switching properties were grown on Pt(111)/Ti/SiO2/Si substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) results show that the films exhibited nanocrystalline or noncrystalline. Scanning electrical microscope (SEM) and atomic force microscope (AFM) were employed to characterize the morphology of as-grown films whose surfaces are flat, smooth and dense. The results of electrical test indicate that the Ti/LCMO/Pt structures show a bipolar ‘negative’ resistive switching behavior. The detailed analysis of currentvoltage (I-V) curves domonstrate that the electrical conduction of the films at low resistance state is controlled by the space charge limited current (SCLC) mechanism, while that at high resistance state is controlled by PooleFrenkel emission (PFE) mechanism. In the continuous I-V sweeping, the value of the high resistance state fluctuates more easily than that of the low resistance state. It is also found that the anomalous changes of current appear in the each I-V scan. All these results can be qualitatively explained by the combination of the randomness of electrochemical reaction and the nonuniformity of TiOx interlayer spatial distribution.

Key words: pulsed laser deposition(PLD), resistive switching behaviors, electric-pulseinduced resistance switching, manganite films

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