Abstract: Highly c-axis oriented ZnO thin films were grown on Si (100) substrate by pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) were employed to analyze the crystalline and microscopic structure of the films. Results show that with the increase of substrate temperature and oxygen pressure, the crystallinity is enhanced and the film presents smooth, dense and uniformed microstructure, and strong interface bonding with substrate under optimal conditions. The photoconductive UV detectors based on ZnO films with interdigital (IDT) configuration were fabricated by the lift-off photo- etching method. The I-V characteristics of the detectors before and after ultraviolet illumination were also investigated, indicating a good ohmic behavior between electrodes and ZnO films, and significant photoresponsivity
was observed under UV illumination.

Key words: ZnO film, pulsed laser deposition (PLD), photoconductive UV detector, photoresponsivity mechanism