Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

doi:10.3724/SP.J.1077.2010.00711

Abstract

Abstract:

Co-N co-doped ZnO thin films were fabricated on quartz and Si(100) substrates using a technique of electron cyclotron resonance (ECR) N₂O plasma-enhanced pulsed laser deposition and studied the influence of N dopant on the electric and magnetic properties of Co doped ZnO thin films. The thin films deposited at 700℃ and N₂O pressure of 15Pa had magnetism at room temperature. The samples were tested by XRD, SEM, XPS, Hall testing and superconducting quantum interference device (SQUID) magnetometry. The results indicate that the configuration of the thin films is a completely c-axis orientation without any Co or N related phases. Co atoms and N atoms substitute Zn and O sites respectively in the form of Co_Znand N_O in the thin films. Hall testing and SQUID results indicate that Co-N co-doped thin films are p type with lower carrier concentration and higher magnetization than those of the Co doped ZnO thin films. The N dopant changes the conduction type and gives rise to the increasing of magnetization of Co doped ZnO thin films.

Key words: PLD, Co-N co-doping, ZnO thin films, magnetism

CLC Number:

O472

WANG Xue-Tao, ZHU Li-Ping, YE Zhi-Gao, YE Zhi-Zhen, ZHAO Bing-Hui. Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films[J]. Journal of Inorganic Materials, 2010, 25(7): 711-716.

References

[1]Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc -blende magnetic semiconductors. Science, 2000, 287(11): 1019-1022.
[2]Coey J M D, Venkatesan M, Fitzgerald C B. Donor impurity band exchange in dilute ferro-magnetic oxides. Nat. Mater., 2005, 4(2): 173-179.
[3]Hou D L, Ye X J, Meng H J, et al. Magnetic properties of Mn-doped ZnO powder and thin films.Mat. Sci. Eng. B
[4][4]Zukova A, Teiserskis A, Kazlauskiene V, et al. Structural and magnetic properties of Co-doped ZnO -lms grown by pulse-injection MOCVD. J. Magn. Magn. Mater., 2007, 316(2): e203-e206.
[5]刘学超, 施尔畏, 张华伟, 等(LIU Xue-Chao, et al). ZnO基稀磁半导体薄膜材料研究进展. 无机材料学报(Journal of Inorganic Materials), 2006, 21(3): 513-520.
[6]于宙, 李祥, 龙雪, 等(YU Zhou, et al). Mn 掺杂ZnO稀磁半导体材料的制备和磁性研究.物理学报(Acta Physica Sinica), 2008, 57(7): 4539-4544.
[7]Philip J, Punnoose A, Kim B I, et al. Carrier- controlled ferromagnetism in transparent oxide semiconductors. Nat. Mater., 2006, 5(4): 298-304.
[8]Khare N, Kappers M J, Wei M, et al. Defect-induced ferromagnetism in Co-doped ZnO. Adv. Mater., 2006, 18(11): 1449-1452.
[9]Ivill M, Pearton S J, Norton D P, et al. Magnetization dependence on electron density in epitaxial ZnO thin films codoped with Mn and Sn. J. Appl. Phys., 2005, 97(5): 053904-1-5.
[10]Lim S W, Jeong M C, Ham M H, et al. Hole-mediated ferromagnetic properties in Zn1-xMnxO thin films. Jpn. J. Appl. Phys., 2004, 43(2B): L280-L283.
[11]Liu X C, Zhang H W, Zhang T, et al. Magnetic properties of Mn-doped ZnO diluted magnetic semiconductors. Chinese Phys. B, 2008, 17(4): 1371-1376.
[12]Heo Y W, Ivill M. P, Ip K, et al. Effects of high-dose Mn implantation into ZnO grown on sapphire. Appl. Phys. Lett., 2004, 84(13): 2292-2294.
[13]Xu X H, Blythe H J, Ziese M, et al. Carrier-induced ferromagnetism in n-type ZnMnAlO and ZnCoAlO thin -lms at room temperature. New J. Phys., 2006, 8: 135-1-11.
[14]Venkatesan M , Stamenov P , Dorneles L S, et al. Magnetic, magnetotransport, and optical properties of Al-doped Zn_0.95Co_0.05O thin -lms. Appl. Phys. Lett., 2007, 90(24): 242508-1-3.
[15]Behan A J, Mokhtari A, Blythe H J, et al. Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator. Phys. Rev. Lett., 2008, 100(4): 047206-1-4.
[16]Kittilstved K R, Schwartz D A, Tuan A C, et al. Direct kinetic correlation of carriers and ferromagnetism in Co²⁺: ZnO. Phys. Rev. Lett., 2006, 97(3): 037203-1-4.
[17]Sato K, Katayama-Yoshida H. First principles materials design for semiconductor spintronics. Semicond. Sci. Technol., 2002, 17(4): 367-376.
[18]Sluiter M H F, Kawazoe Y, Sharma P, et al. First principles based design and experimental evidence for a ZnO-Based ferromagnet at room temperature. Phys. Rev. Lett., 2005, 94(18): 187204-1-4.
[19]Guo X L, Tabata H, Kawai T. Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source. J. Cryst. Growth, 2001, 223(1/2): 135-139.
[20]Guo X L, Tabata H, Kawai T. Epitaxial growth and optoelectronic properties of nitrogen-doped ZnO -lms on(110) Al2O3 substrate. J. Cryst. Growth, 2002, 237-239(1): 544-547.
[21]Zhang Y Z, Lu J G, Ye Z Z, et al. Identification of acceptor states in Li– N dual-doped p-type ZnO thin films. Chin. Phys. Lett., 2009, 26(4): 046103-1-4.
[22]叶志镇, 吕建国, 吕斌, 等. 半导体薄膜技术与物理. 杭州：浙江大学出版社, 2008: 241-243.
[23]杨景景, 方庆清, 王保明, 等(YANG Jing-Jing, et al). Co 掺杂对 ZnO 薄膜结构和性能的影响. 物理学报(Acta Physica Sinica), 2007, 56(2): 1116-1120.
[24]严国清, 谢凯旋, 莫仲荣, 等(YAN Guo-Qing, et al). 共沉淀法制备Co掺杂ZnO的室温铁磁性的研究. 物理学报(Acta Physica Sinica), 2009, 58(2): 1237-1240.
[25]Chuang T J, Brundle C R, Rice D W. Interpretation of the X-ray photoemission spectra of cobalt oxides and cobalt oxide surfaces. Surf. Sci., 1976, 59: 413-429.
[26]王漪, 孙雷, 韩德栋, 等(WANG Yi, et al). ZnCoO稀磁半导体的室温磁性. 物理学报(Acta Physica Sinica), 2006, 55(12): 6651-6656.
[27]Matsui H, Saeki H, Kawai T, et al. N doping using N₂O and NO sources: from the viewpoint of ZnO. J. Appl. Phys., 2004, 95(10): 5882-5888.
[28]Zhu Y, Lin S S, Zhang Y Z, et al. Temperature effect on the electrical, structural and optical properties of N-doped ZnO -lms by plasma-free metal organic chemical vapor deposition. Appl. Surf. Sci., 2009, 255(12): 6201-6204.
[29]Jiao S J, Lu Y M, Zhang Z Z, et al. Optical and electrical properties of highly nitrogen-doped ZnO thin -lms grown by plasma-assisted molecular beam epitaxy. J. Appl. Phys., 2007, 102(11): 113509-1-4.
[30]Lee E C, Kim Y S, Jin Y G, et al. Compensation mechanism for N acceptors in ZnO. Phys. Rev. B, 2001, 64(8): 085120-1-5.
[31]Limpijumnong S, Li X N, Su H W, et al. Substitutional diatomic molecules NO, NC, CO, N₂, and O₂: their vibrational frequencies and effects on p doping of ZnO. Appl. Phys. Lett., 2005, 86(21): 211910-1-3.
[32]Look D C , Farlow G C, Reunchan P, et al. Evidence for native- defect donors in n-type ZnO. Phys. Rev. Lett., 2005, 95(22): 225502-1-4.
[33]Xiong G, Ucer K B, Williams R T, et al. Donor-acceptor pair luminescence of nitrogen-implanted ZnO single crystal. J. Appl. Phys., 2005, 97(4): 043528-1-4.
[34]Sun J W, Lu Y M, Liu Y C, et al. Nitrogen-related recombination mechanisms in p-type ZnO -lms grown by plasma-assisted molecular beam epitaxy.J. Appl. Phys,2007, 102(4):043522-1
[35]Wei Z P, Yao B, Zhang Z Z , et al. Formation of p-type MgZnO by nitrogen doping.Appl. Phys. Lett,2006, 89(10):102104-1
[36]Zeuner A, Alves H, Hofmann D, et al. Optical properties of the nitrogen acceptor in epitaxial ZnO. Phys. Status. Solidi B, 2002, 234(3): R7-R9.
[37]Chen M, Wang X, Yu Y H, et al. X-ray photoelectron spectroscopy and auger electrons pectroscopy studies of Al-doped ZnO films. Appl. Surf. Sci., 2000, 158(1/2): 134-140.
[38]Li L, Fang L, Zhou X J, et al. X-ray photoelectron spectroscopy study and thermoelectric properties of Al-doped ZnO thin -lms. J. Electron Spectrosc. Relat. Phenom., 2009, 173(1): 7-11.
[39]Futsuhara Masanobu, Yoshioka Katsuaki, Takai Osamu. Optical properties of zinc oxynitride thin films. Thin Solid Films, 1998, 317(1/2): 322-325.
[40]Jiménez V M, Fernáindez A, Espinós J P, et al. The state of the oxygen at the surface of polycrystalline cobalt oxide. J. ElectronSpectrosc. Relat. Phenom., 1995, 71(1): 61-71.
[41]叶志高, 朱丽萍, 彭英姿, 等. 脉冲激光沉积法(PLD)生长Co掺杂ZnO薄膜及其磁学性能. 发光学报, 2008, 29(3): 486-490.
[42]彭先德, 朱涛, 王芳卫 (PENG Xian-De, et al). Co