Effects of Ion Implantation on the Structure of Nano-Si3N4

Journal of Inorganic Materials

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Effects of Ion Implantation on the Structure of Nano-Si₃N₄

TU Xian-Hua^1,2; LI Dao-Huo¹; ZHAO Hua-Zhen¹; ZHAN Ming-Sheng²

1. Anhui Institute of Optics and Fine Mechanics; Chinese Academy of Sciences; Hefei 230031; China; 2. State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics; Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan 430071, China

Received:2000-03-20 Revised:2000-06-15 Published:2001-03-20 Online:2001-03-20

Abstract

Abstract: The effects of ion implantation on the structure of nano-Si₃N₄ was studied by means of FT-IR, XPS and photoluminescence spectra. The energy level scheme and the energy structure of nano-Si₃N₄ were given. The results show that ion implantation makes free Si in the material change to SiN_n(n=l, 2), and nano-Si₃N₄possesses a quantum confinement effect, and its photoluminescence peak position and intensity are unstable.

Key words: quantum confinement, unstablity of photoluminescence, ion implantation, nano-Si₃N₄

CLC Number:

TQ174

TU Xian-Hua,LI Dao-Huo,ZHAO Hua-Zhen,ZHAN Ming-Sheng. Effects of Ion Implantation on the Structure of Nano-Si₃N₄[J]. Journal of Inorganic Materials.

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Effects of Ion Implantation on the Structure of Nano-Si₃N₄

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