Stress Induced Microstructure Evolution of AlN: Er Film at Different Annealing Temperature

doi:10.15541/jim20150399

Abstract

Abstract:

The microstructure evolution of AlN: Er during thermal treatment was mainly characterized by weak beam diffraction-contrast imaging and high resolution phase-contrast imaging of the transmission electron microscopy (TEM), which was also supported by X-ray diffraction (XRD) and Raman spectroscopy. Three regions could be observed in the TEM for the implanted samples. The region I is about 30 nm in depth below the surface, the region II is about 50 nm in depth under the region I and is the worst damaged area, and the region III is the area below the reigion II. At relatively low annealing temperature, such as 1025℃, the region I disappears. However, this area can be observed again after annealing at 1200℃. Based on the results of XRD, Raman and TEM, the interesting experiment phenomenon are explained on the view of damage recovery and stress releasing. There is a large stress in the region II due to the large radius difference between Er ions and Ga ions. In the annealing process at 1025℃, the region I is affected by the stress from region II, the lattice distortion in region I is produced. Therefore, the region I is observed as region II under TEM observation. In the annealing process at 1200 ℃, the stress in the region I is released from the surface, the lattice distortion is removed and the region I is observed again under TEM.

Key words: AlN: Er, ion implantation, microstructure evolution

CLC Number:

O474

YANG Ming-Ming, MO Ya-Juan, WANG Xiao-Dan, ZENG Xiong-Hui, LIU Xue-Hua, HUANG Jun, ZHANG Ji-Cai, WANG Jian-Feng, XU Ke. Stress Induced Microstructure Evolution of AlN: Er Film at Different Annealing Temperature[J]. Journal of Inorganic Materials, 2016, 31(3): 285-290.

Figures/Tables 4

Fig. 1 Raman spectra of AlN: Er with various Er concentrations at room temperature

Fig. 2 (a) Raman spectra after being annealed at different temperature with a fluence of 1×1015 at/cm2 and (b) E2high position of AlN with 1×1015 at/cm2 annealed at different temperatures

Fig. 3 (a) HRXRD patterns of AlN with 1×1015 at/cm2 before and after annealling at 1100℃ and (b) variation of AlN (0002) peak and A1 under different dose and annealing temperature. RA is short for rapid annealing

Fig. 4 TEM and HRTEM images of AlN: Er implanted with dosage of 1×1015 at/cm2(a) Weak beam bright field image before anneal( g=0002); (b) HRTEM micrograph of region Ⅰ in Fig.4(a) ; (c) Weak beam bright field image after annealed at 1025℃ (g=0002); (d) HRTEM micrograph of the near surface area, the area inside the box for moiré fringe; (e) HRTEM micrograph of region Ⅰ after annealed at 1100℃(g=0002), area inside the box for moiré fringe; (f) Weak beam bright field image after annealed at 1200℃ under g=0002; (g) HRTEM micrograph of region Ⅰ after annealed at 1200℃

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