Fabrication and Characterization of Silicon Nanoparticles Embedded in SiNx Films

doi:10.3724/SP.J.1077.2011.00802

Journal of Inorganic Materials ›› 2011, Vol. 26 ›› Issue (8): 802-806.DOI: 10.3724/SP.J.1077.2011.00802

• Research Paper • Previous Articles Next Articles

Fabrication and Characterization of Silicon Nanoparticles Embedded in SiN_xFilms

JIANG Li-Hua, ZENG Xiang-Bin, ZHANG Xiao, ZENG Yu

(Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China)

Received:2010-10-21 Revised:2010-12-18 Published:2011-08-20 Online:2011-07-14
Supported by:
Huazhong University of Science and Technology Graduates’ Innovation Fund (HF07022010185); National University Fund of Fundamental Scientific Research(2010MS054)

Abstract

Abstract: Nonstoichiometric silicon nitride (SiN_x) thin films with silicon nanoparticles were deposited on p-type crystalline silicon and quartz substrates at low temperature (200℃) using ammonia and silane mixtures by plasma enhanced chemical vapour deposition (PECVD). The thin films structure was improved by high-temperature (range 500-950℃) annealing. The photoluminescence (PL) spectroscope, Raman spectra and Fourier transform infrared spectroscope (FTIR) of the SiN_xthin films annealed at different temperatures were investigated at room temperature. The structure, luminescence and bonding configurations of the thin films were analyzed. Raman spectra showed that the silicon nanoparticles embedded in SiN_x thin films were amorphous structure. Two PL spectra bands related to silicon nanoparticles were observed from PL spectra and their peak shifts were the same with increase of annealing temperature. For samples annealed below 800℃, the PL peaks show a blue-shift with increasing annealing temperature, while for the samples annealed over 800℃, an obvious red-shift of PL peaks is observed. Three kind of spectral analyses of the films show that photoluminescence of the thin films was attributed to quantum confinement effect of silicon nanoparticles. These results have valuable implications for the optimization of silicon nanoparticles fabrication process and silicon nanoparticles photoelectric device applications.

Key words: silicon nanoparticles, SiNx thin films, quantum confinement effect

CLC Number:

TN205

JIANG Li-Hua, ZENG Xiang-Bin, ZHANG Xiao, ZENG Yu. Fabrication and Characterization of Silicon Nanoparticles Embedded in SiN_xFilms[J]. Journal of Inorganic Materials, 2011, 26(8): 802-806.

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Fabrication and Characterization of Silicon Nanoparticles Embedded in SiN_xFilms

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