Wet-oxidation Mechanism of SiC/SiC Composites Prepared by PIP and RMI Routes

doi:10.15541/jim20260011

Abstract

Abstract:

SiC/SiC composites, renowned for their high toughness, thermal stability and oxidation resistance, become ideal candidate materials for hot-section components in aeroengines. However, high-temperature steam environments pose significant challenges to their practical application. Investigating the microstructural evolution and performance degradation mechanisms of SiC/SiC is crucial for predicting the service life of aeroengine. Here, SiC/SiC composites were fabricated using two liquid-phase methods: precursor infiltration and pyrolysis (PIP) and reactive melt infiltration (RMI). The oxidation behavior of SiC/SiC under high-temperature wet-oxygen conditions was evaluated comprehensively by in-situ wet-oxygen Raman and conventional characterization. The results indicated that residual carbon in PIP-SiC/SiC matrix was oxidized and volatilized as gaseous products between 700 and 1100 ℃, generating structural defects such as micropores and channels in SiC matrix. Thus, the wet-oxygen corrosive gases rapidly diffused to the fiber and interphase regions, leading to the oxidation and erosion of BN interphase at 700 ℃. At 1000 ℃, continuous oxidation caused significant surface structural damage to SiC fibers. With the temperature rising to 1100 ℃, the load-transfer capability of BN interphase was degraded, which can weaken the flexural properties of PIP-SiC/SiC. In contrast, the residual silicon and SiC in RMI-SiC/SiC matrix were oxidized to form molten SiO₂, which can hinder wet-oxygen corrosion. The onset temperature of BN interphase oxidation was increased to 900 ℃, preserving the structural integrity of SiC fibers. At 1100 ℃, the filling effect of oxidation products, including SiO₂ and B₂O₃ can improve SiC matrix strength and interfacial bonding, ensuring efficient load transfer from the matrix to fibers. Consequently, RMI-SiC/SiC exhibits more stable flexural performance in high temperature wet-oxygen environments. This study provides innovative characterization and performance optimization strategies for the structural design of ceramic matrix composites.

Key words: SiC/SiC, in-situ Raman, liquid phase route, wet-oxidation, flexural property

CLC Number:

TB332

GUO Feiyu, SHA Jianjun, CHEN Xiaowu, CHENG Guofeng, DONG Shaoming. Wet-oxidation Mechanism of SiC/SiC Composites Prepared by PIP and RMI Routes[J]. Journal of Inorganic Materials, 2026, 41(9): 1273-1284.

Figures/Tables 13

Fig. 1 Schematic diagram of in-situ (a) and conventional (b) high temperature wet-oxygen equipment

Fig. 2 In-situ oxidation morphologies of PIP-SiC/SiC (a-f), along with Raman spectra of SiC matrix (g) and SiC fibers (h) in the wet-oxygen atmosphere at 700-1100 ℃

Fig. 3 Peak area (a, c) and FWHM (b, d) of different components in PIP-SiC/SiC matrix (a, b) and fibers (c, d)

Fig. 4 SEM images (a-f) and the corresponding EDS results (g, h) of PIP-SiC/SiC after wet-oxidation at 700-1100 ℃

Fig. 5 XRD patterns of PIP-SiC/SiC after wet-oxidation at 700-1100 ℃

Fig. 6 In-situ oxidation morphologies of RMI-SiC/SiC (a-f), along with Raman spectra of SiC matrix (g) and SiC fibers (h) in the wet-oxygen atmosphere at 700-1100 ℃

Fig. 7 Peak area (a, c) and FWHM (b, d) of different components in RMI-SiC/SiC matrix (a, b) and fibers (c, d)

Fig. 8 SEM images of RMI-SiC/SiC and EDS elemental mappings of N element after wet-oxidation at 700-1100 ℃

Fig. 9 XRD patterns of RMI-SiC/SiC after wet-oxidation at 700-1100 ℃

Fig. 10 Weight changes of PIP-SiC/SiC and RMI-SiC/SiC under 700-1100 ℃ wet-oxygen atmosphere

Fig. 11 Load-displacement curves of PIP-SiC/SiC (a) and RMI-SiC/SiC (b) before and after wet-oxidation at 1100 ℃, along with the strength retention (c)

Table 1 Flexural strength of PIP-SiC/SiC and RMI-SiC/SiC before and after wet-oxidation at 1100 ℃

PIP-SiC/SiC	${{\sigma }_{\text{b}}}$/MPa	RMI-SiC/SiC	${{\sigma }_{\text{b}}}$/MPa
As-received	384±43	As-received	301±10
1100 ℃	266±29	1100 ℃	338±36

Fig. 12 Fracture morphologies of PIP-SiC/SiC (a-d) and RMI-SiC/SiC (e-h)

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