Synthesis of the Nitrogen-doped CVD Graphene through Triazine

doi:10.15541/jim20160422

Abstract

Abstract:

Nitrogen-doped graphene (N-graphene) was prepared via molecular doping from symTriazine molecules at low temperature. The phase structure, morphology and electrical property were characterized by Raman spectroscopy (Raman), X-ray photoelectron spectroscope(XPS), atomic force microscope (AFM), ultraviolet spectrophotometer(UV), and Hall tester. Here the method provides a simple and safe process to grow N-graphene. The morphology of N-graphene retains good uniformity, and the transmittance of the graphene is 95% in the range from 300 nm to 800 nm. The typical graphene peaks G-band and 2D-band both upshift after doping. The hole-carrier concentration is decreased immediately after Triazine decoration. After exposure to Triazine for 3 h, the charge-carrier concentration of N-graphene remains as high as 4×10¹²/cm², which approaching the pristine Chemical Vapor Deposition (CVD) graphene’s carrier concentration due to the abundant molecular doping. After N-graphene annealed at 450℃, a hole-carrier concentration of ~8×10¹²/cm² can be regenerated. The sheet resistance of N-graphene can stay steady at 300℃. The mechanism of Triazine doping is that Triazine is an electron-rich aromatic molecule due to the incorporation of N atoms in the aromatic ring, and some negative charges are expected to transfer onto the graphene. This research provides a simple method to obtain N-graphene doping for future application in electrical devices.

Key words: CVD graphene, triazine, nitrogen-doped, carrier concentration, sheet resistance

CLC Number:

TB321

LIU Ying, DAI Dan, JIANG Nan. Synthesis of the Nitrogen-doped CVD Graphene through Triazine[J]. Journal of Inorganic Materials, 2017, 32(5): 517-522.

Figures/Tables 4

Fig. 1 Schematic for Triazine-doping CVD graphene

Fig. 2 (a) Raman spectra of graphene before and after Triazine doping, (b, c, d) Raman images of D peak, 2G peak and I2D/IG

Fig. 3 AFM images (a, b) and transmittance of graphene before and after Triazine doping, respectiuely, (c) vicible light transmittance and (d) XPS survey of grapheme after Triazine doping

Fig. 4 Change of nitrogen doped graphene carrier concentration and the increasing rate of surface resistance with doping time (a) and annealing temperature (b), mechanism of Triazine doping (c)

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