Journal of Inorganic Materials ›› 2021, Vol. 36 ›› Issue (8): 835-840.DOI: 10.15541/jim20200538

Special Issue: 【虚拟专辑】热电材料(2020~2021)

• RESEARCH ARTICLE • Previous Articles     Next Articles

Effect of Mg Content on Thermoelectric Property of Mg3(1+z)Sb2 Compounds

LU Xu1,2(), HOU Jichong1, ZHANG Qiang1,2(), FAN Jianfeng1, CHEN Shaoping2, WANG Xiaomin1,2()   

  1. 1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
    2. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China
  • Received:2020-09-15 Revised:2020-11-04 Published:2021-08-20 Online:2020-12-01
  • Contact: ZHANG Qiang, associate professor.; WANG Xiaomin, professor.
  • About author:LU Xu(1995-), male, Master candidate. E-mail:
  • Supported by:
    National Natural Science Foundation of China(51601123);National Natural Science Foundation of China(U1710118);Natural Science Foundation of Shanxi Province(201801D221139);Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi(2019L0330)


Mg3Sb2 compound has attracted much attention due to the promising thermoelectric properties and cost advantage. However, it is quite difficult to control Mg content during synthesizing processes because of high saturation vapor pressure and chemical reactivity of Mg element. Herein, Mg3(1+z)Sb2 (z=0, 0.02, 0.04, 0.06 and 0.08) samples were prepared by combination of solid state reaction, ball milling and spark plasma sintering (SPS). Their effects of Mg content on thermoelectric properties of Mg3Sb2 compounds were investigated in this study. Results indicate that actual Mg content rises with nominal Mg content increasing, and their point defect type changes from Mg vacancy(${{\text{{V}''}}_{\text{Mg}}}$) to interstitial Mg($\text{Mg}_{\text{i}}^{\centerdot \centerdot }$), leading to transition of transport behavior from p type (hole carriers predominated) for Mg3(1+z)Sb2 (z=0, 0.02, 0.04) samples to n type (electron carriers predominated) for Mg3(1+z)Sb2 (z=0.06, 0.08) samples. Besides, Mg3(1+0.04)Sb2 sample shows the highest ZT value from room temperature to 770 K, and achieves maximum ZT of 0.28 at 800 K. Additionally, Mg3(1+0.04)Sb2 sample exhibits intrinsic p-type transport behavior for Mg3Sb2 compound, which could serve as matrix to be extrinsically doped in the future study for further improvements of electrical properties and ZT value.

Key words: Mg content, Mg3Sb2 compound, carriers, thermoelectric property

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