Journal of Inorganic Materials ›› 2013, Vol. 28 ›› Issue (9): 921-924.DOI: 10.3724/SP.J.1077.2013.12696

• Research Paper • Previous Articles     Next Articles

Thermoelectric Properties of Ni-doped ZnO Synthesized by Sol-Gel Processing

WU Zi-Hua, XIE Hua-Qing, ZENG Qing-Feng   

  1. (School of Urban Development and Environmental Engineering, Shanghai Second Polytechnic University, Shanghai 201209, China)
  • Received:2012-11-19 Revised:2013-01-02 Published:2013-09-20 Online:2013-08-14
  • About author:WU Zi-Hua. E-mail:
  • Supported by:

    National Natural Science Foundation of China (51206103); The Innovation Program of Shanghai Municipal Education Commission (13YZ128); Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning

Abstract: Zn1-xNixO nanoparticles were prepared by Sol-Gel processing. Scanning electron microscope observations indicated that nanoparticles were mainly flake structure with many honeycombed passages on the surface of nanoparticles. For the sintered samples, the solubility limit of Ni in the Zn1-xNixO wurtzite structure was found to be 0.05. All doped samples showed n-type semiconducting conductivity. The increase of x led to a significant decrease in absolute value of Seebeck coefficient (|S|). Over the entire temperature range, the thermal conductivity of Zn1-xNixO samples was much lower than that of bulk ZnO sample. The highest ZT (0.045) was obtained for Zn0.925Ni0.075O at 750 K.

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