Alumina Thin Film Coated Ammonium Dinitramide Fabricated by Atomic Layer Deposition

doi:10.15541/jim20130572

Abstract

Abstract:

To deposit alumina thin films on ammonium dinitramide (ADN) by atomic layer deposition (ALD), trimethylaluminum and water were used as the precursors. The surface morphology and chemical compositions of the ALD alumina coated ADN were characterized by scanning electron microscope (SEM) and X-ray photoelectron spectroscope (XPS). The hygroscopic property of the ALD alumina coated ADN was studied by a vapor adsorption analyzer (VSA). The possible mechanism of ALD aluminafilm growth on the surface of ADN was discussed. The characterization results indicate that the ALD alumina film completely covers the surface of ADN. The thickness of the alumina film can reach hundreds of nanometers. After 48 h of air exposure, the shapes and topologies of the alumina coated ADN particles are maintained. The hygroscopicity of the ADN samples coated by 200 and 400 cycles of ALD alumina are 40.99% and 40.75%, respectively. Although the ALD alumina coating completely covers the surface of ADN and successfully maintains the shapes and topologies of ADN particles in a wet environment, the hygroscopicity of the ALD alumina coated ADN is not improved.

Key words: atomic layer deposition, ammonium dinitramide, alumina, hygroscopicity

CLC Number:

TN304
V512

GONG Ting, QIN Li-Jun, YAN Rui, HU Lan, JI Yue-Ping, FENG Hao. Alumina Thin Film Coated Ammonium Dinitramide Fabricated by
Atomic Layer Deposition[J]. Journal of Inorganic Materials, 2014, 29(8): 869-874.

Figures/Tables 6

Table 1 ALD Al2O3 film thickness on AAO

ALD cycles	m₁/mg	m₂/mg	△m/mg	h/nm
200	10.9	14.3	3.4	20.0
400	10.6	16.8	6.2	40.7

Fig. 1 Saturation curve of ALD ZnO film growth on AAO

Fig. 2 XPS spectra of bare ADN and ADN coated by 200- and 400-cycle ALD A12O3 (a) Survey scan; (b) N1s; (c)Al2p

Fig. 3 SEM images of uncoated ADN particles (a) and the 400-cycle ALD Al2O3 film deposited on ADN (b-f) in which the ADN substrate is removed

Fig. 4 Comparison between uncoated (a) and 400-cycle ALD Al2O3 coated (b) ADN samples after 48-h air exposure

Fig. 5 Isothermal hygroscopic curves of uncoated and 400- cycle ALD Al2O3 coated ADN at 25℃

References 26

[1]	LI S W, ZHAO F Q, YUAN C, et al. Tendency of research and development for overseas solid propellant. Journal of Solid Rocket Technology, 2002, 25(2): 36-42.
[2]	YANG Q J. Combustion characteristics and mechanisms of ammonium dinitramide. Journal of Propulsion Technology, 2003, 24(2): 97-103.
[3]	YUE P, HENG S Y, HAN F, et al. Compatibilities of ADN with five kinds of binders. Chinese Journal of Energetic Materials, 2008, 16(1): 66-69.
[4]	MA Y, ZHANG H L. Study on prilled ammonium dinitramide (ADN). Journal of Solid Rocket Technology, 2002, 25(1): 29-32.
[5]	XU H X, CHEN Z Q, ZHAO F Q, et al. Characteristic of prilled ammonium dinitramide photolyzed with sunlight. Chinese Journal of Energetic Materials, 2007, 15(1): 50-59.
[6]	XU H X, LIAO L Q, LIU Q, et al. Properties of prilled ammonium dinitramide (ADN) coated by polyurethane binders. Chinese Journal of Energetic Materials., 16(6): 712-715.
[7]	ZHANG Z Z, JI Y P, WANG B Z, et al. Application of ammonium dinitramide in propellants explosives . Chinese Journal of Explosives and Propellants., 2004, 27(3): 36-41.
[8]	LIU Q, WANG B Z, ZHANG H H, et al. Inorganic synthesis of ADN and its separation and purification. Chinese Journal of Energetic Materials, 2006, 14(5): 358-360.
[9]	HE J X, YANG T H, ZHANG H L, et al. Synthesis and properties test of a new energetic compound guanidine dinitramide. Journal of Solid Rocket Technology, 2001, 24(4): 53-55.
[10]	THOMAS H, HEIKE P, JASMIN A, et al. Ammonium dinitramide (ADN)-prilling, coating, and characterization. Propellants, Explosives, Pyrotechnics, 2009, 34(3): 231-238.
[11]	WANG J N, ZHANG G, YAN R, et al. Hygroscopicity of ADN with dynamic method. Chinese Journal of Energetic Materials, 2012, 20(1): 86-89.
[12]	HUANG H Y. Study progress of ammonium dinitramide. Aerospace Shanghai, 2005(4): 31-35.
[13]	LIU B, LIU S W, YU H F, et al. Research progress in anti- hygroscopicity of ammonium dinitramide. Chemical prepellants & Polymeric Materials, 2011, 9(6): 57-60.
[14]	THOMAS H, ULRICH T. Production of Microencapsulated Moisture Sensitive Propellants, Explosives and Oxidizing Agents ComPrises Wax Coating Raw Material Particles and Encapsulating with Amine resin. German, A1, DE19923202. 2000.11.23.
[15]	GEORGE S M, OTT A W, KLAUS J W. Surface chemistry for atomic layer growth. Journal of Physical Chemistry, 1996, 100(31): 13121-13131.
[16]	FENG H, ELAM J W, LIBERA J A, et al. Palladium catalysts synthesized by atomic layer deposition for methanol decomposition. Chemistry of Materials, 2010, 22(10): 3133-3142.
[17]	HAUSMANN D, BECKER J, WANG S L, et al. Rapid vapor deposition of highly conformal silica nanolaminates. Science, 2002, 298(5592): 402-406.
[18]	FENG H, ELAM J W, LIBERA J A, et al. Oxidative dehydrogenation of cyclohexane over alumina-supported vanadium oxide nanoliths. Journal of Catalysis, 2010, 269(2): 421-431.
[19]	CARCIA P F, MCLEAN R S, REILLY M H, et al. Ca test of Al2O3 gas diffusion barriers grown by atomic layer deposition on polymers .Applied Physics Letters, 2006, 89(3): 031915.
[20]	ELAM J W, GRONER M D, GEORGE S M. Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition. Review of Scientific Instruments, 2002, 78(3): 2981-2987.
[21]	QIN L J, GONG T, HAO H X, et al. Core-shell-structured nanothermites synthesized by atomic layer deposition .Journal of Nanoparticle Research, 2013, 15(12): 1-16.
[22]	DILLON A C, OTT A W, GEORGE S M, et al. Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence.Surface Science, 1995, 322(1/2/3): 230-242.
[23]	GRONER M D, FABREGUETTE F H, ELAM J W, et al. Low-temperature Al2O3 atomic layer deposition. Chemistry of Materials, 2004, 16(4): 639-645.
[24]	王婧娜. ADN的动态吸湿性研究. 西安: 西安近代化学研究所硕士学位论文, 2012.
[25]	王正烈,周亚平,李松林,等. 物理化学(下册), 4版. 北京: 高等教育出版社, 2001: 156-161.
[26]	OTT A W, KLAUS J W, JOHNSON J M, et al. Al2O3 thin film growth on Si(100) using binary reaction sequence chemistry. Thin Solid Films, 1997, 292(1): 135-144.