硼磷共掺杂n型金刚石薄膜的Hall效应、红外光谱和EPR研究

无机材料学报

硼磷共掺杂n型金刚石薄膜的Hall效应、红外光谱和EPR研究

胡晓君; 李荣斌; 沈荷生; 戴永兵; 何贤昶

上海交通大学金属基复合材料国家重点实验室上海 200030

收稿日期:2003-07-01 修回日期:2003-09-09 出版日期:2004-07-20 网络出版日期:2004-07-20

Hall Measurements, FTIR and EPR for n-Type Boron and Phosphorus Co-doped Diamond Films

HU Xiao-Jun; LI Rong-Bin; SHEN He-Sheng; DAI Yong-Bing; HE Xian-Chang

State Key Lab of MMCM s; Shanghai Jiaotong University; Shanghai 200030; China

Received:2003-07-01 Revised:2003-09-09 Published:2004-07-20 Online:2004-07-20

摘要/Abstract

摘要： 用离子注入方法,在CVD金刚石薄膜中共注入硼离子和磷离子,得到了电阻率较低的n型金刚石薄膜。Hall效应测试表明,800℃退火后,在注入的磷离子剂量相同的情况下,共注入硼的金刚石薄膜的载流子浓度与单一掺磷的相近,但Hall迁移率高,电阻率低。FTIR结果表明B-H结的形成钝化了硼的受主特性,使磷的施主特性没有被补偿,共掺杂薄膜中载流子浓度没有大幅度减少。EPR和Raman测试结果证实了较高温度退火后的共掺杂薄膜的晶格结构比单掺杂薄膜的更完整,从而有利于提高载流子迁移率,降低电阻率。

关键词: 金刚石薄膜, 共掺杂, n型, 电阻率

Abstract: Low resistivity n-type diamond films were prepared by boron and phosphorus co-doping with the ion implantation method.
Hall effect measurements show that the samples have nearly equivalent carrier concentration while the Hall mobility and conductivity of B-P
co-doped diamond films are higher than those of P doped diamond films. FTIR measurements show that the formation of B-H complexes passivates
the acceptor of boron and prevents the phosphorus from passivating by boron. EPR and Raman measurements indicate that the B-P co-doped diamond
films have more perfect lattice than those of P doped diamond films, which is benefit to improve the carrier mobility and decrease the resistivity.

Key words: CVD diamond films, co-doping, n-type, resistivity

中图分类号:

TD874
O484

胡晓君,李荣斌,沈荷生,戴永兵,何贤昶. 硼磷共掺杂n型金刚石薄膜的Hall效应、红外光谱和EPR研究[J]. 无机材料学报.

HU Xiao-Jun,LI Rong-Bin,SHEN He-Sheng,DAI Yong-Bing,HE Xian-Chang. Hall Measurements, FTIR and EPR for n-Type Boron and Phosphorus Co-doped Diamond Films[J]. Journal of Inorganic Materials.

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