无机材料学报

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化学气相沉积SiC涂层生长过程分析

刘荣军; 张长瑞; 周新贵; 曹英斌   

  1. 国防科技大学航天与材料工程学院国防科技重点实验室, 长沙 410073
  • 收稿日期:2004-02-19 修回日期:2004-03-19 出版日期:2005-03-20 网络出版日期:2005-03-20

Growth Characteristics of Chemical Vapor Deposited SiC Coatings

LIU Rong-Jun; ZHANG Chang-Rui; ZHOU Xin-Gui; CAO Ying-Bin   

  1. Key Laboratory of National Defense Technology; College of Aerospace & Materials Engineering; National University of Defense Technology; Changsha 410073; China
  • Received:2004-02-19 Revised:2004-03-19 Published:2005-03-20 Online:2005-03-20

摘要: 以高纯石墨为沉积基体,MTS为先驱体原料,在负压条件下沉积了CVD SiC涂 层.利用SEM和XRD分别对涂层的形貌及晶体结构进行了表征,SiC涂层表面呈菱柱状, (111)面为择优取向面.利用高分辨透射电镜对涂层与基体的界面结构、涂层的显微结构进行 了研究,得出CVD SiC涂层生长过程如下:SiC最初是沿着石墨基体的晶面取向开始生长 的}随后经历一段取向淘汰及调整的过程后,开始(111)晶面的生长.

关键词: 化学气相沉积, SiC, 晶体生长, 涂层, HRTEM

Abstract: The coatings of β-SiC were prepared from the methyltrichlorosilane (MTS) by low-pressure chemical vapor deposition on graphite substrates. The as deposited coatings were characterized by SEM and XRD. The
results of SEM and XRD analyses indicate that the surface morphology of the CVD SiC coating shows pyramid structure with (111) plane preferred orientation. HRTEM was used to investigate the microstructures of the
coatings and the interface between the coatings and graphite substrate. The results show that SiC crystal grows according to the preferred orientation of the substrate at the beginning of the deposition, and then the crystal adjusts
the growth to (111) plane.

Key words: chemical vapor deposition, SiC, crystal growth, coatings, HRTEM

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