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BSTO/Mg2SiO4/MgO复合材料的介电性能研究

陈莹; 董显林; 高敏; 梁瑞虹; 曹菲   

  1. 中国科学院上海硅酸盐研究所, 上海 200050
  • 收稿日期:2004-07-06 修回日期:2004-08-12 出版日期:2005-07-20 网络出版日期:2005-07-20

Dielectric Properties of BSTO/Mg2SiO4/MgO Ceramic Composites

CHEN Ying; DONG Xian-Lin; GAO Min; LIANG Rui-Hong; CAO Fei   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China
  • Received:2004-07-06 Revised:2004-08-12 Published:2005-07-20 Online:2005-07-20

摘要: 采用传统的电子陶瓷制备工艺制备了BSTO/Mg2SiO4/MgO复合材料,并对样品的结构及其介电性能进行了表征与分析,讨论了Mg2SiO4/MgO掺杂对BSTO/Mg2SiO4/MgO复合材料结构和性能的影响.结果表明,与前其他掺杂改性的BSTO复合材料相比,BSTO/Mg2SiO4/MgO 复合材料不仅可以在较低的温度烧结致密,而且在介电常数降低的同时,仍能保持较高的可调性,如BSTO/39wt%Mg2SiO4/17wt%MgO的介电常数εr为-80.21,在2kV/mm的直流偏置电场下,其可调性达到-12%,介电损耗为--0.003.

关键词: 钛酸锶钡, 复合材料, 介电性能, 可调性

Abstract: BSTO/Mg2SiO4/MgO ceramic composites were fabricated by conventional ceramic processing. The microstructures and dielectric properties of the samples were measured and investigated
systemically. The effects of the doping of Mg2SiO4/MgO on the microstructures and dielectric properties of BSTO/Mg2SiO4/MgO ceramic composites were investigated. The results show
that compared with the other BSTO ceramic composites, BSTO/Mg2SiO4/MgO ceramic composites not only can be sintered at a lower temperature but also keep a higher tunability while the dielectric
constant decreases. The typical composition of BSTO/39wt/% Mg2SiO4/17wt% MgO has a dielectric constant of ~80.21, a dielectric loss of ~0.003 and a tunability of ~12% under applying 2kV/mm dc bias field.

Key words: Ba1-xSrxTiO3 (BSTO), ceramic composites, dielectric properties, tunability

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