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无机材料学报

无机材料学报

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多热源SiC合成炉温度场变化规律的模拟与计算

王晓刚, 郭继华, 李成峰   

  1. 西安科技大学材料工程系, 西安 710054
  • 收稿日期:2003-12-11 修回日期:2004-03-01 出版日期:2005-01-20 网络出版日期:2005-01-20

Theory and Application of SiC Synthesis by Multi-heat-source Furnace

WANG Xiao-Gang, GUO Ji-Hua, LI Cheng-Feng   

  1. Department of Material, Xi’an University of Science & Technology, Xi’an 710054, China
  • Received:2003-12-11 Revised:2004-03-01 Published:2005-01-20 Online:2005-01-20

PDF (PC)

1639

被引次数

18

摘要： 碳化硅合成炉具有平面非稳态有内热源的温度场特点, 利用ANSYS软件对多热源炉进行温度场数值计算.以面为对象分析了单个热源对整体温度场的贡献, 以点为对象研究了面的中心
点温度随时间的变化规律, 以线为对象研究了面的中心线的温度随距离的变化规律.研究发现温场的叠加和热源之间的屏蔽是多热源炉节能降耗增产的原因.

关键词: 多热源, SiC, 温度

Abstract: The thermal field of SiC synthesis furnace is plane, instantaneous and of inner thermal source. In the paper the temperature field of multi-heat-source furnace was simulated with the software ANSYS.
To plane, the contribution of each furnace core to the whole temperature field was analyzed. To point, the change of temperature with time on the center point was studied. To line, the change of temperature
with distance on the midline was studied. The results show that the splicing of the thermal field and shielding of each furnace core is the reason of multi-thermal-source furnaces saving power.

Key words: multi-heat-source, SiC, temperature

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