无机材料学报 ›› 2011, Vol. 26 ›› Issue (3): 327-331.DOI: 10.3724/SP.J.1077.2010.10563 CSTR: 32189.14.SP.J.1077.2010.10563

• 研究快报 • 上一篇    下一篇

添加剂对Y2Ti2O7陶瓷的微波介电性能的影响

丁佳钰 1 , 肖 瑗 1 , 王哲飞 1 , 王丽熙 1 , 张其土 1,2   

  1. 南京工业大学1. 材料科学与工程学院; 2. 江苏省无机及复合新材料重点实验室, 南京210009
  • 收稿日期:2010-08-30 修回日期:2010-11-12 出版日期:2011-03-20 网络出版日期:2011-02-18

Effects of Additives on Dielectric Properties of Y2Ti2O7 Ceramics

DING Jia-Yu1, XIAO Yuan1, WANG Zhe-Fei1, WANG Li-Xi1, ZHANG Qi-Tu1,2   

  1. 1.College of Materials Science and Engineering,Nanjing University of Technology,Nanjing 210009, China; 2.Jiangsu Provincial Key Laboratory of New Materials of Inorganic and Its Composites,Nanjing University of Technology ,Nanjing 210009, China
  • Received:2010-08-30 Revised:2010-11-12 Published:2011-03-20 Online:2011-02-18
  • About author:DING Jia-Yu (1986-), female,candidate of master.
  • Supported by:

    Foundation item:Key University Science Research Project of Jiangsu Province (08KJA430002)

摘要: 研究了CrO3、Nb2O5、SiO2及Al2O3对 Y2Ti2O7 陶瓷的烧结性能、相组成和微波介电性能的影响. 其中Nb2O5 掺杂能够降低 Y2Ti2O7 陶瓷材料的烧结温度, 提高基体陶瓷的介电常数和品质因子,引起谐振频率温度系数的明显变化. 且随着Nb2O5含量的增多,所有样品的主晶相仍为立方烧绿石型Y2Ti2O7,Nb5+可能进入烧绿石结构中, 部分取代Ti4+所在位置.实验结果表明:1mol%Nb2O5掺杂的陶瓷材料在 1420℃ 下烧结致密,具有最佳的微波介电性能: ε r =61.8, Q× f =9096GHz (f=5.494GHz), τf =54×10 - 6 /℃.

关键词: 陶瓷, 晶体生长, X射线衍射, 介电性能, 改性

Abstract: The effects of CrO3,Nb2O5 ,SiO2 and Al2O3on the sintering characteristics,phase composition and microwave dielectric properties of Y2Ti2O7 ceramics were investigated. It was found that Nb2O5 can lower the sintering temperature, increase the permittivity and quality factor of Y2Ti2O7 ceramics, and cause great change of the temperature coefficient of resonant frequency.With the increase of Nb 2O5 content, it illustrated that all the samples exhibited cubicpyrochlore-type Y2Ti2O7 as main crystallinephase, and Nb5+ might be considered to partially substitute for Ti4+.The experimental results showed that1 mol% Nb2O5 doped ceramics sintered at1420℃exhibited optimum microwave dielectricproperties: εr=61.8, Q× f =9096 GHz (f=5.494 GHz) and τf=54×10 - 6 /℃.

Key words: ceramics, crystal growth, X-ray diffraction, dielectric properties, modification

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