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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

YSZ薄膜Sol-Gel法制备及其结构分析

+章天金; 唐超群+; 周东祥; 潘小龙+   

  1. 华中理大学固电系; 武汉430074; 华中理工大学物理系 武汉 430074
  • 收稿日期:1996-02-01 修回日期:1996-03-11 出版日期:1997-04-20 网络出版日期:1997-04-20

Preparation and Structure Characterization of YSZ Film by Sol-Gel Method

ZHANG Tianjin; ZHOU Dongxiang; TANG Chaoqun; PAN Xiaolong+   

  1. Department of Solid Electronics; Huazhong University of Science and TechnologyWuhan 430074 China; +Department of Physics; Huazhong University of Science and Technology Wuhan 430074 China
  • Received:1996-02-01 Revised:1996-03-11 Published:1997-04-20 Online:1997-04-20

PDF (PC)

947

被引次数

35

摘要： 本文应用Sol－Gel方法制备了YSZ薄膜，研究了工艺条件对薄膜微观结构的影响.实验发现：基片的选择和清洁、样品的凝胶化速度、热处理过程中的升降温速率等是影响薄膜开裂的几个主要因素．XRD和SEM分析结果表明：应用Sol－Gel方法制备的YSZ薄膜，热处理温度须达800℃以上才能完全排除其中的酸根、有机基因和碳元素，且形成完整的立方相结构．薄膜经500℃、1h热处理后，其表面呈明显的海绵状结构．随着烧结温度的升高，薄膜表面变得致密，气孔明显减少，至1050℃时，薄膜表面光滑、无裂纹、无针孔、圆球形的小颗粒均匀分布．薄膜与衬底的结合紧密，薄膜厚度均匀，膜厚约为1.0μm.

关键词: Sol-Gel法, YSZ薄膜, 制备, 开裂

Abstract: The YSZ film was prepared by sol-gel method. The effect of process conditions on the microstructurewas studied. Wc found that the major factors of the effect on the film cracking are the selection and cleaingof substrates, the rate of gelation, the velocity of the temperature rising and cooling in the heat treatmentprocess, XRD and SEM results showed that the YSZ film prepared by sol-gel method must be calcined atabove 8OO°C, to remove the acidic root, organic groups and carbon element, alld t0 form perfectlyl;cubic phase strcture. The film surface densified and pores decreased with the firing temperature increasing. At 1050℃, the film surface became smooth, crackfree and porefree, the spherical grain distributed uniformly. The film and substrate combined tightly, the thickness of the film was about 1.0μm.

Key words: Sol-Gel method, YSZ films, preparation, crack