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氮化钼膜电极制备工艺及其电化学行为的研究

朱云贵; 李学良; 王华林; 何建波; 鲁道荣   

  1. 合肥工业大学化工学院 合肥 230009
  • 收稿日期:2000-08-07 修回日期:2000-08-29 出版日期:2001-09-20 网络出版日期:2001-09-20

Technical Conditions of Preparation and the Electrochemical Behavior of the Film Electrode of Molybdenum Nitride

ZHU Yun-Gui; LI Xue-Liang; WANG Hua-Lin; HE Jian-Bo; LU Dao-Rong   

  1. School of Chemical Engineering; Hefei University of Technology; Hefei 230009; China
  • Received:2000-08-07 Revised:2000-08-29 Published:2001-09-20 Online:2001-09-20

摘要: 研究了氮化钼膜电极的浸渍-煅烧法制备工艺条件及其电化学行为.试验结果表明,浸渍-煅烧法制备高活性氮化钼电极适宜的浸渍干燥温度为513~473K,煅烧升温速率为1K·min-1,煅烧温度为990K,煅烧时间为2h;冷却方式为在氨气保护下随炉降温;浸渍-煅烧法制备的氮化钼电极成膜均匀,与基体附着性强;在-0.22~0.36V(vs SCE)电位范围内,循环伏安图基本上呈现矩形,当扫描速度s≤100mV·s-1时,电流密度与电势扫描速度成正比,电极电容特征显著,动力学可逆性好,稳定性与重现性好.

关键词: 氮化钼膜电极, 浸渍-煅烧法, 电容, 循环伏安法

Abstract: The technical conditions of preparation of molybdenum nitride film electrode by dip-calcination method and the
electrochemical behaviors of the electrode were studied. The results show that the optimum technical conditions to prepare the electrode are as
follows: the dipping drying temperature is 513~473K, the heating rate for calcinator is 1K·min-1, the calcination time at 990K is 2h,
and then the reaction system cools down along with the furnace which is protected by ammonia gas. The formed film electrode is of uniformity and has
good adhesiveness with Ti substrate. The curve of cyclic voltammetry of the film electrode shows basically rectangle. The film electrode of molybdenum
nitride exhibits a characteristic of capacitor and the reversibility of the kinetics, and shows remarkable stability and reproducibility of
discharge/recharge behavior. The potential range of reversible capacitative behavior is --0.22~0.36V (vs SCE). When the sweep-rate of potential is
less than or equals 100mV·s-1, the response current density increases with the sweep-rate.

Key words: film electrode of molybdenum nitride, dip-calcination method, electric capacity, cyclic voltammetry

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