热退火对射频反应溅射氮化铝薄膜场电子发射的影响

无机材料学报

热退火对射频反应溅射氮化铝薄膜场电子发射的影响

邵乐喜¹; 刘小平¹; 谢二庆²; 贺德衍²; 陈光华³

1. 湛江师范学院物理系, 广东湛江 524002; 2. 兰州大学物理科学与技术学院, 兰州 730000; 3. 北京工业大学材料科学与工程学院, 北京 100022

收稿日期:2000-08-07 修回日期:2000-10-09 出版日期:2001-09-20 网络出版日期:2001-09-20

Influence of Annealing on Electron Field Emission from AlN Films Prepared by RF Reactive Sputtering

SHAO Le-Xi¹; LIU Xiao-Ping¹; XIE Er-Qing²; HE De-Yan²; CHEN Guang-Hua ³

1.Department of Physics; Zhanjiang Normal College; Zhanjiang 524048; China; 2.School of Physics Science and Technology; Lanzhou University; Lanzhou 730000, China; 3.School of Material Science and Engineering, Beijing Polytechnic University, Beijing 100022, China

Received:2000-08-07 Revised:2000-10-09 Published:2001-09-20 Online:2001-09-20

摘要/Abstract

摘要： 以氮气为反应气体；用射频反应溅射方法制备了ＡＩＮ薄膜，结合ＸＰＳ和ＸＲＤ表征考察了热退火后处理对样品场电子发射性能的影响．实验表明，热退火是改善样品场发射稳定性的有效途径，样品经７００℃退火后，发射电流的涨落从未退火前的１３５μＡ下降到２０μＡ；并且发射的开启电压、发射电流的涨落和滞后等对退火温度表现出强烈的依赖性．文中认为，退火处理造成了薄膜结构的变化，引起表面电子亲和势特性以及电导特性的改变，进而影响了其发射特性

关键词: AlN薄膜, 场电子发射, 热退火, 滞后

Abstract: Aluminium nitride(AlN) thin films were deposited by RF reactive sputtering and characterized with XPS and XRD. The influence of thermal
annealing on the electron field emission characteristics of the AlN coating on Si substrate was investigated. The results show that the
annealing treatment of the films is a prefer approach to improve the emission stability and has a remarkable effect on the turn-on voltage
and hysteresis of the emission. It is suggested that the mechanism of these effects could be attributed to that the variation of emission properties of the films may arise from the change of surface electron
affinity and conductivity due to the change of impurities and defects density in the films during annealing treatment at various temperatures.

Key words: AlN film, electron field emission, annealing, hysteresis

中图分类号:

O414

邵乐喜,刘小平,谢二庆,贺德衍,陈光华. 热退火对射频反应溅射氮化铝薄膜场电子发射的影响[J]. 无机材料学报.

SHAO Le-Xi,LIU Xiao-Ping,XIE Er-Qing,HE De-Yan,CHEN Guang-Hua. Influence of Annealing on Electron Field Emission from AlN Films Prepared by RF Reactive Sputtering[J]. Journal of Inorganic Materials.

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