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无机材料学报

无机材料学报

• 研究论文 • 上一篇    

以铝为助剂结合放电等离子烧结制备Ti3SiC2

朱教群; 梅炳初; 陈艳林   

  1. 武汉理工大学材料复合新技术国家重点实验室 武汉 430070
  • 收稿日期:2002-05-20 修回日期:2002-09-13 出版日期:2003-05-20 网络出版日期:2003-05-20

Synthesis of Ti3SiC2 by Spark Plasma Sintering (SPS) with the Addition of Aluminium

ZHU Jiao-Qun; MEI Bing-Chu; CHEN Yan-Lin   

  1. State Key Lab of Advanced Technology for Materials Synthesis and Processing; Wuhan University of Technology; Wuhan 430070; China
  • Received:2002-05-20 Revised:2002-09-13 Published:2003-05-20 Online:2003-05-20

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摘要： 以铝为助剂结合放电等离子烧结工艺,在较低温度下快速制备出高纯致密Ti3SiC2块体材料,掺加适量铝能加快Ti3SiC2的反应合成,提高制备材料的纯度,并促进Ti3SiC2晶体的生长和材料的快速烧结致密,在升温速率为80℃/min,z轴压力为30MPa时,材料制备的最佳温度为1200～1250℃,所制备材料经XRD、SEM和EDS分析表明不含TiC和SiC等杂质相,Ti3SiC2为5～25μm的板状结晶。

关键词: 铝, Ti3SiC2, 制备, 放电等离子烧结

Abstract: Ti3SiC2 material with high purity and density was fabricated by the spark plasma sintering with the addition of aluminium. The proper addition of Al accelerates the synthesis reaction and the crystal growth of Ti3SiC2, and increases the purity of synthesized samples. At the heating rate of 80℃/min and under the pressure of SOMPa, the ideal synthesis temperature ranges from 1150℃ to 1250℃. Ti3SiC2 obtained is in plane-shape with the size of 5-25μm.

Key words: 铝, Ti3SiC2, 制备, 放电等离子烧结

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