无机材料学报 ›› 2023, Vol. 38 ›› Issue (8): 885-892.DOI: 10.15541/jim20230026 CSTR: 32189.14.10.15541/jim20230026
收稿日期:2023-01-16
修回日期:2023-02-09
出版日期:2023-08-20
网络出版日期:2023-03-17
通讯作者:
李 端, 副研究员. E-mail: duan_li_2016@163.com作者简介:李俊生(1982-), 男, 副研究员. E-mail: charlesljs@163.com
基金资助:
LI Junsheng(
), ZENG Liang, LIU Rongjun, WANG Yanfei, WAN Fan, LI Duan(
)
Received:2023-01-16
Revised:2023-02-09
Published:2023-08-20
Online:2023-03-17
Contact:
LI Duan, associate professor. E-mail: duan_li_2016@163.comAbout author:LI Junsheng (1982-), male, associate professor. E-mail: charlesljs@163.com
Supported by:摘要:
AB(O,N)3型钙钛矿氮氧化物是一类新型功能陶瓷材料, 具有独特的介电/磁/光催化等性能, 在能源存储与转化领域应用前景广阔, 但传统制备工艺耗时长且产物纯度较低。本研究以尿素为氮源、金属氧化物为前驱体, 采用无压放电等离子烧结设备一步合成了钙钛矿氮氧化物SrTa(O,N)3陶瓷粉体, 并实现了快速致密化。深入研究了升温速率和合成温度对粉体组成与微观形貌的影响, 并对优化后制备的陶瓷块体进行了介电性能表征。结果表明, 较高的升温速率和适中的合成温度有利于氮化反应的充分进行, 在100 ℃/min和1000 ℃下制得的SrTa(O,N)3粉体纯度最高, 氧氮化物相含量约97%, 粒径分布区间为100~300 nm, Sr、Ta、O、N 四种元素分布均匀。较优的致密化工艺为烧结温度1300 ℃、升温速率300 ℃/min、保温时间1 min, 经烧结制得的SrTa(O,N)3陶瓷试片致密度可达94%以上, 且纯度很高, 该材料在300 Hz时的介电常数高达8349, 介电损耗为10-4量级, 优于文献报道值。本研究制备的SrTa(O,N)3陶瓷的高介电常数与致密度和纯度的调控密不可分, 这是因为气孔和杂质会降低材料介电常数, 高致密度和高纯度是SrTa(O,N)3氧氮化物陶瓷获得优异介电性能的关键。
中图分类号:
李俊生, 曾良, 刘荣军, 王衍飞, 万帆, 李端. 锶钽氧氮化物功能陶瓷的高效合成、致密化及介电性能研究[J]. 无机材料学报, 2023, 38(8): 885-892.
LI Junsheng, ZENG Liang, LIU Rongjun, WANG Yanfei, WAN Fan, LI Duan. Functional Strontium Tantalum Oxynitride Ceramics: Efficient Synthesis, Densification and Dielectric Performance[J]. Journal of Inorganic Materials, 2023, 38(8): 885-892.
| Sample | Synthesis temperature /℃ | Heating rate /(℃·min-1) | Composition/% (in atomic) | O/N | |||
|---|---|---|---|---|---|---|---|
| Sr | Ta | O | N | ||||
| STON-1000-10 | 1000 | 10 | 9.19 | 11.05 | 61.51 | 18.25 | 3.37 |
| STON-800-100 | 800 | 100 | 14.59 | 7.74 | 57.10 | 20.57 | 2.78 |
| STON-900-100 | 900 | 100 | 12.60 | 10.98 | 50.24 | 26.18 | 1.92 |
| STON-1000-100 | 1000 | 100 | 11.74 | 11.92 | 47.83 | 28.51 | 1.68 |
| STON-1100-100 | 1100 | 100 | 10.63 | 13.02 | 44.86 | 31.49 | 1.42 |
| STON-1200-100 | 1200 | 100 | 10.11 | 13.50 | 44.17 | 32.22 | 1.37 |
表1 样品合成条件(升温制度)及元素含量
Table 1 Synthesis conditions (heating strategy) and element content
| Sample | Synthesis temperature /℃ | Heating rate /(℃·min-1) | Composition/% (in atomic) | O/N | |||
|---|---|---|---|---|---|---|---|
| Sr | Ta | O | N | ||||
| STON-1000-10 | 1000 | 10 | 9.19 | 11.05 | 61.51 | 18.25 | 3.37 |
| STON-800-100 | 800 | 100 | 14.59 | 7.74 | 57.10 | 20.57 | 2.78 |
| STON-900-100 | 900 | 100 | 12.60 | 10.98 | 50.24 | 26.18 | 1.92 |
| STON-1000-100 | 1000 | 100 | 11.74 | 11.92 | 47.83 | 28.51 | 1.68 |
| STON-1100-100 | 1100 | 100 | 10.63 | 13.02 | 44.86 | 31.49 | 1.42 |
| STON-1200-100 | 1200 | 100 | 10.11 | 13.50 | 44.17 | 32.22 | 1.37 |
图5 不同合成温度所得产物的光学与SEM照片
Fig. 5 Optical and SEM images of the products obtained at different synthesis temperatures (a) 800 ℃; (b) 900 ℃; (c) 1000 ℃; (d) 1100 ℃; (e) 1200 ℃
图6 SrTa(O,N)3粉体X射线衍射的Rietveld精修谱图
Fig. 6 Rietveld refinement of XRD pattern for SrTa(O,N)3 Vertical marks indicate the standard Bragg position for SrTaNO2 (upper) and Sr2Ta2O7 (lower)
图7 优化合成制得SrTa(O,N)3粉体的SEM照片和EDS元素分布图
Fig. 7 SEM image and EDS mappings of SrTa(O,N)3 powder prepared under optimized conditions (a) SEM image; (b) Sr; (c) Ta; (d) O; (e) N
| Sample | Heating rate/ (℃·min-1) | Sintering temperature/℃ | Dwell time/min | Density/ (g·cm-3) | Relative density/% | Open porosity/% | (Open porosity/ Total porosity)/% |
|---|---|---|---|---|---|---|---|
| STON-SPS-1 | 300 | 1100 | 1 | 5.69 | 70.94 | 3.12 | 10.77 |
| STON-SPS-2 | 300 | 1200 | 1 | 6.30 | 78.54 | 7.54 | 35.28 |
| STON-SPS-3 | 300 | 1250 | 0 | 6.93 | 86.40 | 4.37 | 21.90 |
| STON-SPS-4 | 300 | 1250 | 1 | 7.13 | 88.89 | 0.43 | 3.89 |
| STON-SPS-5 | 300 | 1250 | 3 | 7.24 | 90.26 | 0.57 | 5.88 |
| STON-SPS-6 | 200 | 1300 | 1 | 7.37 | 91.88 | 0.69 | 8.53 |
| STON-SPS-7 | 300 | 1300 | 1 | 7.55 | 94.13 | 0.55 | 9.52 |
| STON-SPS-8 | 300 | 1400 | 1 | 7.67 | 95.62 | 0.49 | 11.53 |
表2 不同SPS工艺所得氧氮化物陶瓷的密度及孔隙率(100 MPa)
Table 2 Density and porosity of oxynitride ceramics prepared by different SPS processes (100 MPa)
| Sample | Heating rate/ (℃·min-1) | Sintering temperature/℃ | Dwell time/min | Density/ (g·cm-3) | Relative density/% | Open porosity/% | (Open porosity/ Total porosity)/% |
|---|---|---|---|---|---|---|---|
| STON-SPS-1 | 300 | 1100 | 1 | 5.69 | 70.94 | 3.12 | 10.77 |
| STON-SPS-2 | 300 | 1200 | 1 | 6.30 | 78.54 | 7.54 | 35.28 |
| STON-SPS-3 | 300 | 1250 | 0 | 6.93 | 86.40 | 4.37 | 21.90 |
| STON-SPS-4 | 300 | 1250 | 1 | 7.13 | 88.89 | 0.43 | 3.89 |
| STON-SPS-5 | 300 | 1250 | 3 | 7.24 | 90.26 | 0.57 | 5.88 |
| STON-SPS-6 | 200 | 1300 | 1 | 7.37 | 91.88 | 0.69 | 8.53 |
| STON-SPS-7 | 300 | 1300 | 1 | 7.55 | 94.13 | 0.55 | 9.52 |
| STON-SPS-8 | 300 | 1400 | 1 | 7.67 | 95.62 | 0.49 | 11.53 |
图9 SPS烧结所得SrTa(O,N)3块体的SEM和光学照片
Fig. 9 SEM and optical images of SrTa(O,N)3 bulk obtained by SPS process (a) STON-SPS-1; (b) STON-SPS-4; (c) STON-SPS-7
图11 本工作制备的SrTa(O,N)3陶瓷低频介电常数与文献报道值比较[11-12,14,24]
Fig. 11 Dielectric constants at low frequency ranges of SrTa(O,N)3 ceramic bulk in this work and literatures[11-12,14,24]
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