无机材料学报 ›› 2010, Vol. 25 ›› Issue (8): 785-794.DOI: 10.3724/SP.J.1077.2010.00785 CSTR: 32189.14.SP.J.1077.2010.00785

• 综述 •    下一篇

YAG和LuAG晶体中的反位缺陷

冯锡淇   

  1. (中国科学院 上海硅酸盐研究所 透明和光功能先进无机材料重点实验室, 上海200050)
  • 收稿日期:2009-11-04 修回日期:2010-03-05 出版日期:2010-08-20 网络出版日期:2010-07-19
  • 基金资助:

    国家自然科学基金重大项目(50990300)

Anti-site Defects in YAG and LuAG Crystals

FENG Xi-Qi   

  1. (Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China)
  • Received:2009-11-04 Revised:2010-03-05 Published:2010-08-20 Online:2010-07-19

摘要:

YAG不仅是最重要的固体激光材料, 也是有希望的闪烁材料, 自YAG晶体问世以来, 晶体缺陷研究对YAG晶体的性能改进和发展起到了十分关键的作用. 反位缺陷是YAG和LuAG晶体中一种特殊类型的缺陷, 它对晶体中载流子的输运过程和其它性质有重要影响, 本文介绍YAG和LuAG晶体中反位缺陷的类型、产生原因及其对性能的影响和作用机制. 最后, 还对如何测定反位缺陷和抑制反位缺陷的方法进行了简略讨论.

关键词: 反位缺陷, 非化学计量配比, 陷阱, 闪烁性能

Abstract:

YAG is not only one of the most important solid laser crystals, but also a promising scintillation material. Since it comes out, the studies of defects in YAG crystal have played key roles on the improvement and development of crystal properties. As a special kind of defect in the YAG and LuAG crystals, anti-site defects exert crucial influence on the carrier transportation and other properties. In this paper, the type and the origin of the anti-site defects in the YAG and LuAG crystals, as well as the mechanism of their effects on the crystal properties are described. Also, how to detect and inhibit the anti-site defects in the YAG and LuAG crystals are discussed.

Key words: antisite defects, nonstoichoimetry, traps, scitillation performance

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