CVI B-C基体改性2D C/SiC在低温湿氧中的自愈合行为

doi:10.3724/SP.J.1077.2010.01199

无机材料学报 ›› 2010, Vol. 25 ›› Issue (11): 1199-1203.DOI: 10.3724/SP.J.1077.2010.01199 CSTR: 32189.14.SP.J.1077.2010.01199

CVI B-C基体改性2D C/SiC在低温湿氧中的自愈合行为

李思维¹, 张立同¹, 刘永胜¹, 成来飞¹, 冯祖德², 栾新刚¹, 张伟华¹, 杨文彬¹

(1. 西北工业大学超高温结构复合材料国防科技重点实验室, 西安 710072; 2. 厦门大学材料学院, 特种先进材料福建省重点实验室, 厦门 361005)

收稿日期:2010-01-27 修回日期:2010-03-23 出版日期:2010-11-20 网络出版日期:2010-11-01
基金资助:
国家自然科学基金(90405015, 50672076, 50425208)

Self-healing Behavior of 2D C/SiC Modified by Partial Boron Carbide Matrix after Annealing at Low Temperature in Wet Oxygen

LI Si-Wei¹, ZHANG Li-Tong¹, LIU Yong-Sheng¹, CHENG Lai-Fei¹, FENG Zu-De², LUAN Xin-Gang¹, ZHANG Wei-Hua¹, YANG Wen-Bin¹

(1. National Key Laboratory of Thermostructure Composite Materials, Northwestern Polytechnical University, Xi’an 710072, China; 2. Fujian Key Laboratory of Advanced Materials, College of Materials, Xiamen University, Xiamen 361005, China)

Received:2010-01-27 Revised:2010-03-23 Published:2010-11-20 Online:2010-11-01
Supported by:
National Natural Science Foundation (90405015, 50672076, 50425208)

摘要/Abstract

摘要： 针对C/SiC低温氧化易失效的不足, 研究了CVI B-C基体改性2D C/SiC在700℃湿氧中100MPa下加载至60h的氧化行为, 利用SEM和TEM观察了改性材料不同服役时间的微结构特征, 揭示了演变规律. 研究表明, CVI B-C基体改性使C/SiC低温抗氧化能力显著提升. 基体裂纹及其在应力加载下的开裂均为氧化气体提供进入通道,而后可被B-C氧化产物B₂O₃封填, 抑制内部C消耗. CVI B-C与其氧化产物一同参与缺陷愈合. 在60h内, B-C改性层愈合能力尚未完全发挥, 可服役更长时间.

关键词: C/SiC复合材料, 基体改性, CVI B-C涂层, 自愈合, SEM, TEM

Abstract: Oxidation behavior of 2D C/SiC composites modified by boron carbide self-sealing matrix was investigated at low temperature of 700℃ in wet oxygen. Oxidation tests were conducted under a creep stress of 100MPa up to 60h. Microstructural evolution of the modified composites was explored by SEM and TEM. Results show that the modified composites hold better inoxidizability than the conventional C/SiC composites, which is caused by the self-heal of matrix cracks (and the stress enlarged ones) with oxidation induced B₂O₃ and the inhibition of C oxidation. The unoxidized B-C is identified as a coagent of B₂O₃ to fulfill the healing. Healing ability of the modified matrix is preserved in 60h and is valid for longer periods of time.

Key words: C/SiC composites, matrix modification, CVI B-C, self-healing, SEM, TEM

中图分类号:

TB332

李思维, 张立同, 刘永胜, 成来飞, 冯祖德, 栾新刚, 张伟华, 杨文彬. CVI B-C基体改性2D C/SiC在低温湿氧中的自愈合行为[J]. 无机材料学报, 2010, 25(11): 1199-1203.

LI Si-Wei, ZHANG Li-Tong, LIU Yong-Sheng, CHENG Lai-Fei, FENG Zu-De, LUAN Xin-Gang, ZHANG Wei-Hua, YANG Wen-Bin. Self-healing Behavior of 2D C/SiC Modified by Partial Boron Carbide Matrix after Annealing at Low Temperature in Wet Oxygen[J]. Journal of Inorganic Materials, 2010, 25(11): 1199-1203.

参考文献

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CVI B-C基体改性2D C/SiC在低温湿氧中的自愈合行为

Self-healing Behavior of 2D C/SiC Modified by Partial Boron Carbide Matrix after Annealing at Low Temperature in Wet Oxygen

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