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无机材料学报

无机材料学报 ›› 2010, Vol. 25 ›› Issue (11): 1195-1198.DOI: 10.3724/SP.J.1077.2010.01195 CSTR: 32189.14.SP.J.1077.2010.01195

• 研究论文 • 上一篇    下一篇

CdGeAs2多晶合成与单晶生长研究

何知宇, 赵北君, 朱世富, 陈宝军, 李佳伟, 张 熠, 杜文娟   

  1. (四川大学 材料科学系, 成都 610064)
  • 收稿日期:2010-04-17 修回日期:2010-05-20 出版日期:2010-11-20 网络出版日期:2010-11-01
  • 基金资助:

    国家自然科学基金重点项目(50732005); 国家863计划项目(2007AA03Z443)

Polycrystal Synthesis and Single Crystal Growth of CdGeAs2

HE Zhi-Yu, ZHAO Bei-Jun, ZHU Shi-Fu, CHEN Bao-Jun, LI Jia-Wei, ZHANG Yi, DU Wen-Juan   

  1. (School of Materials Science and Engineering, Sichuan University, Chengdu 610064, China)
  • Received:2010-04-17 Revised:2010-05-20 Published:2010-11-20 Online:2010-11-01
  • Supported by:

    National Natural Science Foundation of China (50732005); 863 Program(2007AA03Z443)

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被引次数

1

摘要： 对新型中红外非线性光学材料CdGeAs2的多晶合成和单晶生长进行了研究. 以高纯(99.9999%)As、Ge、Cd为原料, 按照CdGeAs2化学计量比并适当富Cd、As配料, 采用机械振荡与熔体温度振荡相结合的方法合成出CdGeAs2多晶材料, 使用改进的坩埚下降法生长出直径15mm×45mm、外观完整无开裂的CdGeAs2单晶体. XRD全谱拟合精修、红外傅里叶分光光度计测试分析表明: 合成的CdGeAs2晶体具有单相四方黄铜矿结构, 晶格常数为a=b=0.5946nm, c=1.1217nm; 生长出的CdGeAs2单晶体结构完整, 结晶性好, 晶体的易解理面为(101)面, 红外透明范围589~4250cm-1, 拟合计算出CdGeAs2晶体的禁带宽度为0.67eV.

关键词: 砷锗镉, 多晶合成, 单晶生长, XRD分析, 红外透过谱

Abstract: CdGeAs2 polycrystal was synthesized by the raw materials of 99.9999% Cd, Ge and As in stoichiometric weights with proper excess of Cd and As through mechanical and temperature oscillation of melt(MTOM). An integral, crack free CdGeAs2 single crystal with size of 15 mm×40 mm was obtained by modified vertical descending cubic technique. The CdGeAs2 polycrystal and as-grown crystals were characterized by X-ray diffraction and infrared spectroscopy. XRD riteveld analysis indicates that the synthetic product is high-purity CdGeAs2 polycrystal in chalcopyrite structure, the lattice constants of a and c are 0.5946nm and 1.1217nm, respectively. The as-grown crystal is integrated in structure and crystallized well. It is also found that the cleavage plane of the crystal is (101). CdGeAs2 wafer with 1.0 mm thickness is transparent in range of 589-4250cm-1, and the band width is calculated to be 0.67eV.

Key words: CdGeAs2, synthesis, single crystal growth, XRD analysis, IR transmission spectrum

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