化学镀制备Ni包覆纳米SiC核壳颗粒及其介电响应

doi:10.3724/SP.J.1077.2006.00797

摘要/Abstract

摘要： 摘要: 采用简单的化学镀方法, 在相对低的温度下制备了具有核-壳结构的SiC-Ni纳米复合颗粒. XRD和TEM分析结果表明,纳米Ni晶吸附在SiC颗粒表面, 可以形成一层连续且致密的Ni包覆层. 基于化学镀和催化理论, 初步分析了化学镀核壳结构形成机理. 利用波导法研究了纳米SiC颗粒和复合颗粒在8～12GHz的微波介电特性. 研究结果表明, 复合颗粒的介电常数实部(ε')和介电损耗角正切值(tanδ=ε''/ε')都明显增强, 并给出相应的理论模型.

关键词: 化学镀, SiC, SiC-Ni核壳结构, 介电性能

Abstract: A nanoscale core-shell structure of β-SiC P-Ni was prepared at lower temperature by a simple and convenient electroless plating approach. The core-shell nanoparticles were characterized by means of XRD and TEM. The results show that β-SiC nanoparticles (β-SiC P) are coated by a uniform and continuous nickel
shell. The mechanism based on the theory of electroless plating and palladium
catalysis was discussed in details about core-shell structure of β-SiC P-Ni. Dielectric permittivities of the original silicon carbide nanoparticles (β-SiC P) and nickel-coated β-SiC P in paraffin wax were measured respectively in the GHz frequency range from 8 to 12GHz. The real part and dielectric loss tangent of the nickel-coated β-SiC P were significantly enhanced. The origin of the enhancement was discussed in theory, and also explained by discussing the change of surface electrical conduction behavior of β-SiC P and nickel-coated β-SiC P.

Key words: electroless plating, SiC, core-shell structure of silicon carbide and nickel, dielectric property

中图分类号:

TB333

邹桂真,曹茂盛,张亮,金海波宿辉,王正平. 化学镀制备Ni包覆纳米SiC核壳颗粒及其介电响应[J]. 无机材料学报, DOI: 10.3724/SP.J.1077.2006.00797.

ZOU Gui-Zhen,CAO Mao-Sheng,ZHANG Liang,JIN Hai-Bo,XU Hui,WANG Zheng-Ping. Preparation and Dielectric Enhancement of Nickel-coated β-SiC Nanoparticles[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2006.00797.

参考文献

1 Che R C, Peng L M, Duan X F, et al. Adv. Mater., 2004, 16: 401-404.
2 Wadhawan A, Garrett D, Perez J M. Appl. Phys. Lett., 2003, 83: 2683-2685.
3 Wu Y H, Kong L B. Appl. Phys. Lett., 2004, 84: 4956-4958.
4 Watts P C P, Ponnampalam D R, Hsu W K, et al. Chem. Phys. Lett., 2003, 378: 609-614.
5 Gueorguiev G K, Pacheco J M, Tomanek D. Phys. Rev. Lett., 2004, 92: 215501-215505.
6 Chen Y J, Cao M S, Wang T H, et al. Appl. Phys. Lett., 2004, 84: 3367-3369.
7 Zhao D L, Zhao H S, Zhou W C. Physica E, 2001, 9: 679-685.
8 Imholt T J, Dyke C A, Hasslacher B, et al. Chem. Mater., 2003, 15: 3969-3794.
9 Zhang B, Li J B, Sun J J, et al. J. Eur. Ceram. Soc., 2002, 22: 93-99.
10 Microwave processing of ceramics - an overview. 3rd edition, edited
by W. H. Sutton, R. L. Beatty, M. F. Iskander and W. H. Sutton. Materials Research Society, San Francisco, 1992.
11 Morkoc H, Strite S, Guo G B. J. Appl. Phys., 1994, 76: 1363-1398.
12 Krstic V D. Am J. Ceram. Soc., 1992, 75: 170-175.
13 Bardal A. J. Mater. Sci., 1993, 28 (10): 2699-2703.
14 Chen C K, Feng H M, Lin H C. Thin Solid Films., 2002, 416: 31-37.
15 Hou Y C, Chen Y S, Amro N A, et al. Chem. Commun., 2000, 12: 1831-1832.
16 Mizukoshi Y, Fujimoto T, Nagata Y, et al. J. Phys. Chem., B 2000, 104: 6028-6032.
17 Jang J S, Lim B K. Ange. Chem. Int. Edit., 2003, 42: 5600-5603.
18 张锐, 王海龙, 高濂, 等(ZHANG Rui, et al). 无机材料学报(Journal of Inorganic Materials), 2005, 20 (2): 294-498.
19 张锐, 高濂, 郭景坤(ZHANG Rui, et al). 无机材料学报(Journal of Inorganic Materials), 2003, 18 (3): 575-579.
20 张巨先, 侯耀永, 高陇桥, 等(ZHANG Ju-Xian, et al). 硅酸盐学报(Journal of the Chinese Ceramic Society), 1998, 26 (6): 762-767.
21 Chen Y J, Cao M S, Xu Q, et al. Surf. Coat. Tech., 2003, 172: 90-94.
22 Grosiean A, Rezrazi M, Tachez M. Surf. Coat. Technol., 1997, 96: 300-304.
23 Leon C, Rivera A, Varez A, et al. J. Phys. Rev. Lett., 2001, 86: 1279-1281.
24 Rao Y, Qgitani S, Koh P, et al. Electronic Components and Technology Conference. 2000. 183-187.
25 Shim J, Kim H T. Electro. Lett., 1998, 34: 1833-1834.

[1]	全文心, 余艺平, 方冰, 李伟, 王松. 管状C/SiC复合材料高温空气氧化行为与宏细观建模研究[J]. 无机材料学报, 2024, 39(8): 920-928.
[2]	谭敏, 陈小武, 杨金山, 张翔宇, 阚艳梅, 周海军, 薛玉冬, 董绍明. 流延成型结合反应熔渗制备ZrB₂-SiC陶瓷及其微观结构与氧化行为研究[J]. 无机材料学报, 2024, 39(8): 955-964.
[3]	姜灵毅, 庞生洋, 杨超, 张悦, 胡成龙, 汤素芳. C/SiC-BN复合材料的制备及氧化行为[J]. 无机材料学报, 2024, 39(7): 779-786.
[4]	吴晓晨, 郑瑞晓, 李露, 马浩林, 赵培航, 马朝利. SiC_f/SiC陶瓷基复合材料高温环境损伤原位监测研究进展[J]. 无机材料学报, 2024, 39(6): 609-622.
[5]	粟毅, 史扬帆, 贾成兰, 迟蓬涛, 高扬, 马青松, 陈思安. 浆料浸渍辅助PIP工艺制备C/HfC-SiC复合材料的微观结构及性能研究[J]. 无机材料学报, 2024, 39(6): 726-732.
[6]	郑斌, 康凯, 张青, 叶昉, 解静, 贾研, 孙国栋, 成来飞. 前驱体转化陶瓷法制备Ti₃SiC₂陶瓷及其热稳定性研究[J]. 无机材料学报, 2024, 39(6): 733-740.
[7]	何宗倍, 陈放, 刘佃光, 李统业, 曾强. 模拟核芯FCM燃料的振荡烧结行为研究[J]. 无机材料学报, 2024, 39(5): 501-508.
[8]	管皞阳, 张立, 荆开开, 师维刚, 王晶, 李玫, 刘永胜, 张程煜. 国产三代2.5D SiC_f/SiC复合材料的界面力学性能[J]. 无机材料学报, 2024, 39(3): 259-266.
[9]	吴军, 徐培飞, 荆瑞, 张大海, 费庆国. SiC/SiC复合材料层板低速冲击及其剩余强度试验研究[J]. 无机材料学报, 2024, 39(1): 51-60.
[10]	师维刚, 张超, 李玫, 王晶, 张程煜. 2D-SiC_f/SiC复合材料层间I型断裂试验及表征[J]. 无机材料学报, 2024, 39(1): 45-50.
[11]	吴爽, 苟燕子, 王永寿, 宋曲之, 张庆雨, 王应德. 高温热处理对国产KD-SA型SiC纤维组成结构与力学性能的影响[J]. 无机材料学报, 2023, 38(5): 569-576.
[12]	张硕, 付前刚, 张佩, 费杰, 李伟. C/C多孔体的高温热处理对C/C-SiC复合材料摩擦磨损行为的影响[J]. 无机材料学报, 2023, 38(5): 561-568.
[13]	陈雷, 胡海龙. 柔性PDMS基介电复合材料的电场及击穿损伤形貌演变规律研究[J]. 无机材料学报, 2023, 38(2): 155-162.
[14]	荆开开, 管皞阳, 朱思雨, 张超, 刘永胜, 王波, 王晶, 李玫, 张程煜. Cansas-II SiC_f/SiC复合材料的高温拉伸蠕变行为[J]. 无机材料学报, 2023, 38(2): 177-183.
[15]	熊希希, 杨祥龙, 陈秀芳, 李晓蒙, 谢雪健, 胡国杰, 彭燕, 于国建, 胡小波, 王垚浩, 徐现刚. 低位错密度8英寸导电型碳化硅单晶衬底制备[J]. 无机材料学报, 2023, 38(11): 1371-1372.