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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

磁控溅射制备纳米TiO2薄膜导电性的研究

顾广瑞1,3; 李英爱1; 陶艳春2; 何志1; 赵永年1,2   

  1. 1. 吉林大学超硬材料国家重点实验室, 长春130023; 2. 吉林大学超分子结构和谱学开放实验室; 长春 130023; 3. 延边大学理工学院, 延吉 133002
  • 收稿日期:2002-09-03 修回日期:2002-10-22 出版日期:2003-11-20 网络出版日期:2003-11-20

Conductivity of Magnetron-sputtered Nanometer TiO2 Thin Films

GU Guang-Rui1,3; LI Ying-Ai1; TAO Yan-Chun2; HE Zhi1; ZHAO Yong-Nian1,2   

  1. 1. National Laboratory for Superhard Materials; 2. Key Lab for Supermolecular Structure and Spec-troscopy; Jilin University; Changchun 130023; China; 3. College of Science and Engineering; Yanbian University; Yanji 133002; China
  • Received:2002-09-03 Revised:2002-10-22 Published:2003-11-20 Online:2003-11-20

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摘要： 研究了在纳米厚度范围内,TiO2薄膜的导电性与薄膜厚度和基底材料的关系.利用射频磁控溅射方法,使用高纯Ti(99.99％)靶,通入Ar和O2的混合气体,制备了TiO2薄膜,薄膜膜厚15～225nm.在室温下测量了不同厚度TiO2薄膜的电阻率,发现TiO2薄膜的导电性,先后在导体、半导体和绝缘体范围变化.这归因于基底材料与TiO2的功函数不同,导致了界面电子的转移,功函数差决定了电子转移的深度.

关键词: TiO2薄膜, 导电性, 电阻率, 界面电子转移

Abstract: The conductivity of nanometer TiO2 thin films was studied. The dependence of the conductivity of TiO2 thin films on the thickness of the film and the
substrate materials were educed. The TiO2 films were deposited by reactive magnetron sputtering of Ti target in an Ar+O2 mixture in a conventional
sputtering reactor. The thickness of the films varied in the range from 15nm to 225 nm. The electrical resistivity of the films was measured at
room temperature in the air. The results show that the conductivity of TiO2 thin films varies from metal, semiconductor to nonconductor. This is
attributed to the transfer of the electrons at the interface between the TiO2 and substrates, and the difference of work function determines the
depth of the transfer of the electrons.

Key words: TiO2 thin films, conductivity, resistivity, transfer of electrons

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