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无机材料学报

无机材料学报

• 研究论文 • 上一篇    

Si(111)衬底上生长的立方MgxZn1-x晶体薄膜

邱东江1; 吴惠桢1; 陈奶波1; 田维坚2   

  1. 1. 浙江大学物理系, 杭州 310028; 2. 中国科学院西安精密光学机械研究所, 西安 710068
  • 收稿日期:2002-10-10 修回日期:2002-12-11 出版日期:2003-11-20 网络出版日期:2003-11-20

Cubic MgxZn1-xO Films Grown on Si (111)

QIU Dong-Jiang1; WU Hui-Zhen1; CHEN Nai-Bo1; TIAN Wei-Jian2   

  1. 1.Department of Physics; Zhejiang University; Hangzhou 310028; China; 2. Xi an Institute of Optics and Precision Mechanics; Chinese Academy of Sciences; Xi an 710068; China
  • Received:2002-10-10 Revised:2002-12-11 Published:2003-11-20 Online:2003-11-20

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摘要： 在国际上第一次采用电子束反应蒸发法在Si(111)衬底上生长了MgxZn1-xO晶体薄膜.能量色散X射线(EDX)特征能谱及X射线衍射(XRD)分析表明薄膜呈立方结构,薄膜的晶面取向依赖于生长温度,在200℃温度下生长得到高度(200)取向的立方MgxZn1-xO薄膜,温度过高时得到多晶薄膜.对高度(200)取向的立方MgxZn1-xO薄膜的光荧光激发谱(PLE)分析表明其光学带隙为4.20eV,相对于MgO的带隙红移量为3.50eV.XRD分析还表明立方MgxZn1-xO薄膜与MgO衬底之间的晶格失配仅为0.16％.这使得高质量立方MgxZn1-xO/MgO多量子阱材料的制备成为可能.

关键词: 电子束反应蒸镀, 立方MgxZn1-xO薄膜

Abstract: Epitaxy of the cubic MgxZn1-xO thin films on Si (111) was achieved by the reactive electron beam evaporation
for the first time. Energy dispersive x-ray detection (EDX) and x-ray diffraction (XRD) were employed to characterize the as-grown films. The
orientation of cubic MgxZn1-xO films relies on the growth temperature and the highly (200) oriented MgxZn1-xO films are
attainable only at the optimal growth temperature of about 200℃. Photoluminescence excitation (PLE) spectroscopic measurement demonstrates
that the optical absorption band edge of the cubic MgxZn1-xO is at 4.20eV, which is 3.50eV lower than the band gap of MgO. Furthermore, XRD
measurements indicate the lattice mismatch between cubic MgxZn1-xO and MgO is only 0.16%. The successful growth of high quality MgxZn1-xO
renders the fabrication of cubic phase MgxZn1-xO/MgO multiple quantum wells possible.

Key words: reactive e-beam evaporation, cubic MgXZn1-xO film

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