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激活温度对C-H体系低压金刚石生长条件的影响

刘志杰; 张卫; 万永中; 王季陶   

  1. 复旦大学电子工程系CVD研究室; 上海200433
  • 收稿日期:1997-06-06 修回日期:1997-06-19 出版日期:1998-06-20 网络出版日期:1998-06-20

C-H System Low-Pressure Diamond Growth Condition influenced by Activation Temperature

LIU Zhi-Jie; ZHANG Wei; WAN Yong-Zhong; WANG Ji-Tao   

  1. Dept. of Electronic Engineering; CVD Lab.; Fudan University Shanghai 200433 China
  • Received:1997-06-06 Revised:1997-06-19 Published:1998-06-20 Online:1998-06-20

摘要: 本文根据非平衡热力学耦合模型计算了不同激活温度下的金刚石生长相图,研究了不同激活温度下金刚石生长区的变化.激活温度升高,金刚石生长区变大,有利于生长金刚石.对干不同的衬底温度,随激活温度的升高,金刚石生长区的变化也有所不同.

关键词: 激活温度, 金刚石, C-H体系, 相图

Abstract: Diamond growth phase diagrams were calculated under different activation temperaturesbased on non-equilibrium thermodynamic coupling model. The diamond growth regions are enlarged with the increase of activation temperature. As to different substrate temperatures, thediamond growth regions exhibit different tendency with activation temperature rising.

Key words: activation temperautre, diamond, C-H system, phase diagram

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