Co-Se 化合物薄膜的电沉积制备与表征

doi:10.3724/SP.J.1077.2011.00403

摘要/Abstract

摘要： 采用电沉积方法在SnO₂玻璃基底上制备了Co-Se化合物薄膜. 研究了薄膜形成的电化学机理和电沉积工艺对薄膜组成与形貌的影响, 并表征了薄膜的结构与光学性质. 结果表明:Co²⁺受预沉积Se的表面诱导还原或直接与H₂SeO₃的六电子还原反应产物H₂Se发生反应形成Co-Se化合物; 沉积电位、沉积温度和pH值均显著影响电沉积Co-Se化合物薄膜的形貌与成分; 在沉积电位为-0.5V(<>vsSCE)、沉积温度为50℃和pH值为2.0时可制备出表面致密平整且呈六方晶型结构的富硒CoSe薄膜, 其光吸收系数达到1×10⁵cm^-¹,直接带隙宽度为(1.53±0.01)eV,接近单结太阳电池光吸收层材料的理论最佳值.

关键词: CoSe薄膜, 循环伏安, 欠电位沉积, 带隙宽度, 太阳电池

Abstract: Cobalt selenide thin films were prepared onto tin oxide-coated glass substrates by electrodeposition method. The electrochemical mechanisms for this thin film formation were investigated by cyclic voltammetry (CV), and the results show that cobalt selenide compound phases are formed via either surface induced reduction by predeposited selenium or directly reaction with H₂Se from six electron reduction of H₂SeO₃. It is also found that films’ stoichiometry and morphology are significantly influenced by deposition potential, deposition temperature and pH value. Se-rich CoSe thin films with hexagonal crystal structure and compact morphology can be obtained at deposition potential of - 0.5V ( vs SCE), deposition temperature of 50 ℃ and pH value of 2.0. The electrodeposited CoSe film shows an optical absorption coefficient of higher than 1 × 10⁵ cm ^-¹, and an optical band gap of (1.53±0.01) eV which is close to the theoretical optimization value of the light absorption layer materials in single-junction solar cell.

Key words: CoSe thin films, cyclic voltammetry, under potential deposition, band gap, solar cells

中图分类号:

TM615

王博, 刘芳洋, 李劼, 赖延清, 张治安, 刘业翔. Co-Se 化合物薄膜的电沉积制备与表征[J]. 无机材料学报, 2011, 26(4): 403-410.

WANG Bo,LIU Fang-Yang,LI Ji e,LAI Yan-Qing,ZHANG Zhi-An,LIU Ye-Xiang. Preparation and Characterization of Co-Se Thin Films by Electrodeposition[J]. Journal of Inorganic Materials, 2011, 26(4): 403-410.

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