无机材料学报 ›› 2015, Vol. 30 ›› Issue (10): 1105-1109.DOI: 10.15541/jim20150098

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单源热蒸发制备有机无机杂化CH3NH3PbI3薄膜及其性能表征

范 平1,2, 古 迪1, 梁广兴1,2, 罗景庭1,2, 张东平1,2, 陈聚龙1   

  1. (1. 深圳大学 物理科学与技术学院, 薄膜物理与应用研究所, 深圳518060; 2. 深圳市传感器技术重点实验室, 深圳518060)
  • 收稿日期:2015-02-12 修回日期:2015-05-18 出版日期:2015-10-20 网络出版日期:2015-09-30
  • 基金资助:
    国家自然科学青年基金(61404086);中央财政支持地方高校发展专项基金(000022070150);深圳市传感器技术重点实验室开放基金(SST201401)

Growth and Characterization of Hybrid Organolead Halide CH3NH3PbI3 Thin Films Prepared by Single Source Thermal Evaporation

FAN Ping1,2, GU Di1, LIANG Guang-Xing1,2, LUO Jing-Ting1,2, ZHANG Dong-Ping1,2, CHEN Ju-Long1   

  1. (1. Institute of Thin Film Physics and Applications, College of Physics Science and Technology, Shenzhen University, Shenzhen 518060, China; 2. Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060, China)
  • Received:2015-02-12 Revised:2015-05-18 Published:2015-10-20 Online:2015-09-30
  • Supported by:
    National Natural Science Foundation of China (61404086);Central Finance for the Development of Local Universities (000022070150);Shenzhen Key Laboratory of Sensor Technology Open Project (SST201401)

摘要:

采用全真空单源热蒸发沉积技术直接制备钙钛矿太阳电池用有机无机杂化CH3NH3PbI3薄膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、能量色散谱仪(EDS)和分光光度计对制备的CH3NH3PbI3薄膜微结构、表面形貌、化学成分和光学性能进行表征分析, 并与非真空旋涂法制备的CH3NH3PbI3薄膜性能进行比较。结果表明: 单源热蒸发法制备的CH3NH3PbI3薄膜呈现单一的钙钛矿四方晶体结构, 且与蒸发源材料的晶体结构同源性高, 没有出现杂质相偏析; 对比旋涂法制备的CH3NH3PbI3薄膜表面均匀致密平整, 且薄膜结晶度更高; 单源热蒸发法制备的CH3NH3PbI3薄膜禁带宽度为1.57 eV, 符合钙钛矿太阳电池吸收层光学性能要求。

关键词: 单源热蒸发法, CH3NH3PbI3薄膜, 钙钛矿太阳电池, 微结构

Abstract:

Hybrid organolead halide CH3NH3PbI3 thin films were prepared by thermal evaporation with single source. The microstructure, composition, surface morphology and optical properties of the thin films were characterized by X-ray diffractometry (XRD), X-ray dispersive spectroscope (EDS), scanning electron microscope (SEM) and spectrophotometer technique, respectively. The comparison on properties for the films prepared by different methods (thermal evaporation and spin coating) was illustrated. Compared to the film prepared by spin coating, uniform, the nonporous and complete surface coverage perovskite thin film with high level of phase purity and good crystallization is formed by single source thermal evaporation. A direct bandgap of 1.57 eV for CH3NH3PbI3 thin films is obtained which makes this material to be a good light absorber.

Key words: thermal evaporation, CH3NH3PbI3 thin films, perovskite solar cell, microstructure

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