无机材料学报 ›› 2018, Vol. 33 ›› Issue (9): 1001-1005.DOI: 10.15541/jim20170568

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A位La掺杂的单晶化合物Sr2IrO4电输运特性

段天赐1, 2, 王好文3, 王伟3, 裴玲1, 2, 胡妮1, 2   

  1. 1. 湖北工业大学 太阳能高效利用湖北省协同创新中心, 武汉 430068;
    2. 湖北工业大学 理学院, 武汉 430068;
    3. 华中科技大学物理学院, 武汉 430074
  • 收稿日期:2017-11-27 修回日期:2018-03-23 出版日期:2018-09-20 网络出版日期:2018-08-14
  • 作者简介:段天赐(1991-), 男, 硕士研究生. E-mail: 237484470@qq.com
  • 基金资助:
    国家自然科学基金(11374112, 11304091, 11604089)

Electrical Transport Property of A-site La Doped of Sr2IrO4

DUAN Tian-Ci1, 2, WANG Hao-Wen3, WANG Wei3, PEI Ling1, 2, HU Ni1, 2   

  1. 1. Hubei Collaborative Innovation Center for High-efficient Utilization of Solar Energy, Hubei University of Technology, Wuhan 430068, China;
    2. School of Science, Hubei University of Technology, Wuhan 430068, China;
    3. School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
  • Received:2017-11-27 Revised:2018-03-23 Published:2018-09-20 Online:2018-08-14
  • About author:DUAN Tian-Ci. E-mail: 237484470@qq.com
  • Supported by:
    National Natural Science Foundation of China (11374112, 11304091, 11604089)

摘要:

5 d强自旋轨道耦合氧化物Sr2IrO4中的电输运物理是该领域存在争议的一个科学问题。本研究应用flux法成功制备(Sr1-xLax)2IrO4(x=0, 0.01, 0.02, 0.03, 0.05)等系列单晶样品, 并通过综合物性测量仪对样品电输运特性进行表征。研究表明: 随着La掺杂浓度的增加, 样品体系电阻率显著下降, 并在x≥0.03时出现金属性(dρab/dT>0)。通过对样品电阻率的一系列拟合发现, 未掺杂的Sr2IrO4单晶样品在高温部分(T>140 K)和较低温区(40 K<T<80 K)导电机制符合三维变程跳跃模型, 中温部分(80 K<T<140 K)导电机制则符合热激发机制; 而掺杂样品仅在较低温部分(T<90 K)呈现出明显的变程跳跃电导, 并且样品中的激活能随掺杂量增加而减小。通过变程跳跃电导模型拟合发现, 掺杂样品中的局域化长度明显大于Ir-O键长, 可能是源于系统中载流子产生的退局域化效应。

 

关键词: Sr2IrO4 Mott绝缘体, 电输运, 热激活, 三维变程跃迁

Abstract:

The physics of electric transport in iridate Sr2IrO4 has been a long term controversial issue in the field of 5d oxides. A series of single crystal samples (Sr1-xLax)2IrO4 were prepared by flux method, and their electrical transport properties were investigated. The results reveal that the sample shows metallic transport at x≥0.03. A close examination of the transport data reveals drastic modulation for the conduction mechanism upon La-doping. For the non-doped sample, three-dimensional Mott variable range hopping conduction is respectively identified at T>140 K and 40 K<T<80 K, and thermal activation conduction is revealed at 80 K<T<140 K. For the doped sample, the Mott variable range hopping conduction is only found at T<90 K, and the activation energy is revealed to decrease with the La-doping content increasing. In addition, the localization length of the doped samples is found to be much larger than the Ir-O bond length, which may due to delocalization effect of the carriers in the systems.

Key words: Sr2IrO4 Mott insulator, electric transport, thermal activation, 3D variable range hopping

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