PdSe2半导体薄膜的真空硒化法制备研究

doi:10.15541/jim20200540

无机材料学报 ›› 2021, Vol. 36 ›› Issue (7): 779-784.DOI: 10.15541/jim20200540

• 研究快报 • 上一篇

PdSe₂半导体薄膜的真空硒化法制备研究

王慧¹^,²(), 张淑娟¹^,³, 陈亭伟¹, 张传林¹, 罗豪甦², 郑仁奎¹()

1.南昌大学材料科学与工程学院, 江西省先进功能薄膜材料工程实验室, 南昌 330031
2.中国科学院上海硅酸盐研究所, 上海 200050
3.江西科技师范大学材料机械工程学院, 南昌 330038

收稿日期:2020-09-15 修回日期:2020-10-11 出版日期:2021-07-20 网络出版日期:2020-12-01
通讯作者: 郑仁奎, 教授. E-mail:zrk@ustc.edu
作者简介:王慧(1994-), 女, 博士研究生. E-mail:AliceWang9494@163.com

Electronic Property of PdSe₂ Thin Films Fabricated by Post-selenization of Pd Films

WANG Hui¹^,²(), ZHANG Shujuan¹^,³, CHEN Tingwei¹, ZHANG Chuanlin¹, LUO Haosu², ZHENG Renkui¹()

1. Jiangxi Engineering Laboratory for Advanced Functional Thin Films, School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
3. School of Materials, Mechanic, and Electrical Engineering, Jiangxi Science and Technology Normal University, Nanchang 330038, China

Received:2020-09-15 Revised:2020-10-11 Published:2021-07-20 Online:2020-12-01
Contact: ZHENG Renkui, professor. E-mail:zrk@ustc.edu
About author:WANG Hui(1994-), female, PhD candidate. E-mail:AliceWang9494@163.com
Supported by:
National Natural Science Foundation of China(11974155)

摘要/Abstract

摘要：

PdSe₂薄膜主要通过机械剥离法和气相沉积法制得, 本研究采用一种简单有效的可在SiO₂/Si衬底上制备PdSe₂薄膜的方法。通过高真空磁控溅射技术在SiO₂/Si衬底上沉积一层Pd金属薄膜, 将Pd金属薄膜与Se粉封在高真空的石英管中并在一定的温度下进行硒化, 获得PdSe₂薄膜。根据截面高分辨透射电镜(HRTEM)照片可知PdSe₂薄膜的平均厚度约为30 nm。进一步研究硒化温度对PdSe₂薄膜电输运性能的影响, 当硒化温度为300 ℃时, 所制得的PdSe₂薄膜的体空穴浓度约为1×10¹⁸ cm^-3, 具有最大的室温迁移率和室温磁阻, 分别为48.5 cm²·V^-1·s^-1和12%(B=9 T)。值得注意的是, 本实验中通过真空硒化法获得的薄膜空穴迁移率大于通过机械剥离法制得的p型PdSe₂薄膜。随着硒化温度从300 ℃逐渐升高, 由于Se元素容易挥发, Pd薄膜的硒化程度逐渐减小, 导致薄膜硒含量、迁移率和磁电阻降低。本研究表明：真空硒化法是一种简单有效地制备PdSe₂薄膜的方法, 在贵金属硫族化合物的大面积制备及多功能电子器件的设计中具有潜在的应用价值。

关键词: 贵金属硫族化合物, 硒化, 电输运性能, 磁阻

Abstract:

At present, the approaches to fabricate PdSe₂ thin films mainly focus on mechanical exfoliation and chemical vapor deposition. In this study, we report a simple and efficient method to fabricate PdSe₂ thin films on SiO₂/Si substrates. Firstly, a Pd metal layer was deposited on a SiO₂/Si substrate using magnetron sputtering. Then the PdSe₂ thin film was obtained through selenization of the Pd layer at certain temperatures in a vacuum quartz ampule containing Se powder. According to the cross-sectional high-resolution transmission electron microscopy (HRTEM) image, the as-grown PdSe₂ thin film has an average thickness of about 30 nm. The correlation between selenization temperature and electronic transport properties of PdSe₂ thin films was investigated. PdSe₂ thin films with a hole carrier concentration of ~10¹⁸ cm^-3 and a mobility of ~48.5 cm²·V^-1·s^-1 are realized at a low selenization temperature of 300 ℃. It is worth noting that the mobility obtained by the vacuum selenization is superior to that of the p-type PdSe₂ thin films fabricated by mechanical exfoliation from bulk PdSe₂ single crystals. In addition, a relatively large room-temperature magnetoresistance (MR) of 12% is achieved for the PdSe₂thin films selenized at 300 ℃. With the increase in the selenization temperature from 300 ℃, mobility and magnetoresistance decrease due to the evaporation of Se element at high temperatures. This work demonstrates that present one-step selenization process is a facile and efficient approach to synthesize PdSe₂ films, which could actually be used to prepare PdSe₂ films in a large scale and may have potential applications for next-generation electronic and magneto-electronic devices.

Key words: noble metal dichalcogenide, selenization, electronic transport property, magnetoresistance

中图分类号:

TB34

王慧, 张淑娟, 陈亭伟, 张传林, 罗豪甦, 郑仁奎. PdSe₂半导体薄膜的真空硒化法制备研究[J]. 无机材料学报, 2021, 36(7): 779-784.

WANG Hui, ZHANG Shujuan, CHEN Tingwei, ZHANG Chuanlin, LUO Haosu, ZHENG Renkui. Electronic Property of PdSe₂ Thin Films Fabricated by Post-selenization of Pd Films[J]. Journal of Inorganic Materials, 2021, 36(7): 779-784.

图/表 5

Fig. 1 Side and top view of the crystal structure of PdSe2 thin films (a), schematic illustration for the growth of PdSe2 films on SiO2/Si substrates by post-selenization of a Pd layer in an evacuated quartz ampule (b), and structure diagram of the PdSe2/SiO2/Si structure (c)

Fig. 2 Photograph of an as-synthesized 5 mm×5 mm PdSe2 thin film (a), and top-view micrographs of the films selenized at 200 (b), 250 (c), 300 (d), 450 (e), and 600 ℃ (f), respectively

Fig. 3 Raman spectra (a), FWHM of the Ag3 peaks (b) and Se/Pd atomic ratios (c) of the PdSe2 thin films selenized at different temperatures, cross-sectional HRTEM images for a film selenized at 300 ℃(d-e)

Fig. 4 Hall resistivity (a), carrier concentration (b), carrier mobility (c), and MR (d) of PdSe2 thin films fabricated at different selenization temperatures Inset in (b) is conductivities of different PdSe2 thin films. Dashed lines in (b, c) represent the carrier density and mobility of the Pd layer

Table 1 Comparison of the hole carrier mobility of our p-type PdSe2 with other thin films

Method	Mobility/(cm²·V^-1·s^-1)	Ref.
Exfoliation	20.0	[13]
Exfoliation	14.0	[18]
Exfoliation	0.9	[35]
Exfoliation	1.8	[36]
Vacuum selenization	48.5	This work

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PdSe₂半导体薄膜的真空硒化法制备研究

Electronic Property of PdSe₂ Thin Films Fabricated by Post-selenization of Pd Films

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