无机材料学报 ›› 2016, Vol. 31 ›› Issue (3): 274-278.DOI: 10.15541/jim20150397

• 研究论文 • 上一篇    下一篇

La0.7Ca0.3-xSrxMnO3薄膜的电输运特性研究

张媛媛1(), 唐晓东1(), 陈莹2, 王根水2, 董显林2   

  1. 1.华东师范大学 信息科学技术学院, 上海 200241
    2.中国科学院 上海硅酸盐研究所, 上海 200050
  • 收稿日期:2015-08-24 修回日期:2015-10-28 出版日期:2016-03-20 网络出版日期:2016-02-24
  • 作者简介:

    张媛媛(1982-), 女, 讲师. E-mail: yyzhang@ee.ecnu.edu.cn

  • 基金资助:
    国家自然科学基金(51302084, 11304097, 61176011, 61376129, 11374098)

Electrical Transport Properties in La0.7Ca0.3-xSrxMnO3 Thin Films

ZHANG Yuan-Yuan1(), TANG Xiao-Dong1(), CHEN Ying2, WANG Gen-Shui2, DONG Xian-Lin2   

  1. 1. School of Information Science Technology, East China Normal University, Shanghai 200241, China
    2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2015-08-24 Revised:2015-10-28 Published:2016-03-20 Online:2016-02-24
  • Supported by:
    National Natural Science Foundation of China (51302084, 11304097, 61176011, 61376129, 11374098)

摘要:

采用溶胶-凝胶法制备La0.7Ca0.3-xSrxMnO3(LCSMO)薄膜, 探讨掺杂对结构、磁性能与电输运特性的影响机制。从X射线衍射(XRD)结果来看, 所有薄膜均具有典型钙钛矿结构。LCSMO薄膜的居里温度(TC)和金属绝缘体转变温度(TMI)均随Sr掺杂浓度增加而单调增加。总体看来, 当x ≤0.05时, LCSMO薄膜磁阻率类似于窄带系LCMO 系材料, 在TMI周围较宽的温度区间内存在相分离, 而相分离过程中多相共存的无序状态是该类材料庞磁阻效应的主要来源。对特定温度下的磁阻率随磁场的变化进行分析, 当温度低于TMI时, 磁阻率随磁场变化出现双梯度, 低磁场时晶界隧穿效应起主导, 该部分效应对磁场特别敏感, 高磁场时磁阻率主要来源于磁场对自旋波动的压制; 当温度接近或高于TMI时, 晶界隧穿效应逐渐消失, 磁阻率随磁场线性变化, 磁场对自旋波动的压制起主导作用。

关键词: 锰氧化物, 溶胶-凝胶法, 电输运特性

Abstract:

The influence of the chemical composition on the structure, magnetic and electrical transport properties of La0.7Ca0.3-xSrxMnO3 (LCSMO, x≤0.05) thin films was systematically studied. LCSMO thin films were prepared by Sol-Gel method. XRD results show that all the films have typical perovskite structure. With increase of Sr doping concentration, both Curie temperature TC and metal-insulator transition temperature TMI of LCSMO thin films increase monotonously. When Sr doping concentration x≤0.05, with increase of temperature, absolute value of MR decreases first, then increases to a maximum value around TMI, and finally decreases, which indicates that the disorder coming from phase separation around TMI contributes greatly to MR. The field dependence of MR values at certain temperature can be classified into two kinds. When the temperature is much lower than TMI, dual gradient of MR with the magnetic field is shown. The tunneling effect on the grain boundaries plays a dominant part in the low magnetic field, and this effect is particularly sensitive to the magnetic field; the suppression of spin fluctuations by magnetic field is the main reason in the high magnetic field range. When the temperature is higher than TMI, MR of LCSMO thin films changes almost linearly with the magnetic field which is mainly due to suppression of spin fluctuations by magnetic field.

Key words: manganese oxides, Sol-Gel method, transport properties

中图分类号: