残余应力对SrRuO3薄膜磁学及电输运性能的影响

doi:10.15541/jim20160190

摘要/Abstract

摘要：

采用射频磁控溅射法在单晶SrTiO₃ (STO)衬底和硅(Si)衬底上制备出不同取向的SrRuO₃ (SRO)薄膜, 对薄膜的残余应力进行了分析, 并研究了应力对不同取向SRO薄膜磁学性能与电输运特性的影响。根据X射线衍射(XRD)结果分析可知, Si基SRO薄膜为多晶单轴取向薄膜, 且应力来源主要为热失配拉应力; STO基SRO薄膜为外延薄膜, 其应力主要为热失配压应力和外延压应力; 磁学性能测试表明, (001)取向SRO薄膜比(110)取向薄膜拥有更高的居里温度T_C; 压应力提高了(001)取向SRO薄膜的T_C, 却降低了(110)取向薄膜的T_C。电阻性能测试表明, 对于在同种类型衬底上沉积的SRO薄膜, (001)取向的薄膜的剩余表面电阻比(RRR)高于(110)取向的薄膜。另外, 拉应力引起了薄膜微结构的无序度增加, 弱化了表面电阻率的温度依赖性, 提高了金属绝缘体转变温度(T_MI)。

关键词: 钌酸锶, 取向, 残余应力, 磁学性能, 电输运特性

Abstract:

A series of SrRuO₃ (SRO) thin films with preferential orientations were grown on SrTiO₃ (STO) and Si substrates respectively by radio frequency (RF) magnetron sputtering technique. XRD results show that STO-based SRO thin films are epitaxial which differ from the one-axis orineted Si-based films. Residual stress type of the deposited films and effect of the stress on magnetic and electrical transport properties were systematically analyzed and summarized. STO-based SRO films suffer from compressive stress due to the lattice and thermal mismatch, while the Si-based films are subjected to tensile stress which is only derived from the thermal mismatch. The compressive stress promotes the Curie temperature (T_C) of (001)-oriented SRO films, but reduces the T_C of (110)-oriented SRO films, which may be due to the different states of rotation and tilt of RuO₆ octahedron. Besides, the (001)-oriented SRO films possess higher T_C than the (110)-oriented SRO films all along. The results of temperature versus resistivity measurements reveal that residual resistivity ratio (RRR) of (001)-oriented SRO films is higher than that of (110)-oriented SRO films which deposited on the same substrate. Moreover, the temperature of metal-insulator transition (T_MI) increases from 16 K to 32 K while the temperature dependence of resistivity is suppressed by the tensile stress.

Key words: SrRuO3, orientation, residual stress, magnetic properties, transport properties

中图分类号:

TQ174

朱明康, 董显林, 陈莹, 丁国际, 王根水. 残余应力对SrRuO₃薄膜磁学及电输运性能的影响[J]. 无机材料学报, 2017, 32(1): 75-80.

ZHU Ming-Kang, DONG Xian-Lin, CHEN Yin, DING Guo-Ji, WANG Gen-Shui. Effect of Residual Stress on Magnetic and Electrical Transport Properties in SrRuO₃ Thin Films[J]. Journal of Inorganic Materials, 2017, 32(1): 75-80.

图/表 6

表1 LNO薄膜和SRO薄膜的溅射工艺

Table1 Sputtering parameters of LNO and SRO films

Sputtering parameters	LNO	SRO
Base pressure /Pa	5×10^-4	5×10^-4
Deposition pressure/Pa	3	10
Power/W	80	80
O₂/(Ar+O₂)	20%	20%
Substrate temperature/℃	450	600

图1 不同衬底上沉积的SRO薄膜的XRD图谱

Fig. 1 XRD patterns of SrRuO3 thin films deposited on different substrates(a) (100)SrTiO3 and LNO/SiO2/Si; (b) (110) SrTiO3 and SiO2/Si

表2 不同SRO薄膜的晶格常数和应变值

Table2 Lattice parameters and strain of different SRO films

SRO	c/nm	ɛ/%
(001) on STO	0.3962	0.814
(001) on Si	0.3916	-0.356
(110) on STO	0.3945	0.383
(110) on Si	0.3917	-0.336

图2 不同衬底上生长的SRO薄膜的应力示意图

Fig. 2 Schematic illustration of stress state for different oriented SRO films on various substates

图3 不同衬底上生长的不同取向的SRO薄膜的 (a)磁化强度随温度的变化曲线和(b)磁化强度对温度的求导值随温度的变化曲线

Fig. 3 (a) Temperature versus magnetization under field cooling (FC) conditions and (b) the dM/dT vs temperature for different oriented SRO films on various substrates

图4 不同SRO薄膜的(a)归一化表面电阻率随温度的变化曲线和(b)表面电阻对温度的求导随温度的变化曲线

Fig. 4 (a) Temperature versus normalized resistivity and (b) the dρ/dT values vs temperature for different oriented SRO films on various substrates

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残余应力对SrRuO₃薄膜磁学及电输运性能的影响

Effect of Residual Stress on Magnetic and Electrical Transport Properties in SrRuO₃ Thin Films

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