Journal of Inorganic Materials ›› 2018, Vol. 33 ›› Issue (11): 1225-1231.doi: 10.15541/jim20180045

• Orginal Article • Previous Articles     Next Articles

Stress Induced Modulation of the Structure and Photoelectric Property of Vanadium Oxide Films on Sapphire Substrate

Cong ZHANG(), Chao-Yang KANG(), Hai-Tao ZONG, Ming LI, Shan-Shan LIANG, Guo-Hua CAO   

  1. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China
  • Received:2018-01-29 Revised:2018-05-29 Online:2018-11-16 Published:2018-10-20
  • About author:ZHANG Cong. E-mail: 18839187763@163.com
  • Supported by:
    National Natural Science Foundation of China (11405045, 51301062);The Program for Innovative Research Team of Henan Polytechnic University (T2017-2);The Doctoral Fund Project of Henan Polytechnic University (B2013-046)

Abstract:

VO2 thin films with different thicknesses were deposited on sapphire substrates by pulsed laser deposition. Structure, surface morphologies and photoelectric properties of the films were characterized. The results indicated that the Monoclinic-VO2 thin films deposited on the sapphire substrates were high quality poly-crystalline stoichiometric with no detectable impurities, and the sheet resistance changed up to 3-4 orders of magnitude and the transmittance at 2500 nm up to 56% across metal-insulator transition (MIT). The optimized integral luminous transmittance (Tlum) and solar regulation rate (∆Tsol) were 43.2% and 8.7%, respectively. The stress on the interface had important influence on the VO2 thin film, and the photoelectric properties of VO2 thin films could be regulated by adjusting the film thickness. When the VO2 film was thinner, the film was subjected to tensile stress, which could significantly reduce the phase-change temperature, and the increase of the carrier concentration as well as carrier mobility accounted for the decrease of electrical resistance across the MIT. While the VO2 film was thicker, the film was subjected to compressive stress and the phase transition temperature of VO2 film was close to that of body VO2. The increase of the carrier concentration accounted almost entirely for the decrease of electrical resistance and the change in mobility had little contribution to the MIT.

Key words: pulsed laser deposition, VO2, stress, photoelectric properties

CLC Number: 

  • O484