Journal of Inorganic Materials

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Structure and Properties of BST/BZT/BST Multilayer Film

QIN Wen-Feng1, XIONG Jie2, LI Yan-Rong2   

  1. 1. Aviation Engineering Institute, Civil Aviation Flight University of China, Guanghan 618307, China; 2. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China
  • Received:2009-04-30 Revised:2009-09-11 Online:2010-03-20 Published:2010-03-20
  • Contact: QIN Wen-Feng

Abstract: Ba 0.6 Sr 0.4 TiO3(BST) thin film, Ba(Zr 0.2 Ti 0.8 )O3(BZT)thin film and Ba 0.6 Sr 0.4 TiO3(BST)/Ba(Zr 0.2 Ti 0.8 )O3(BZT)/Ba 0.6 Sr 0.4 TiO3(BST) (BST/BZT/BST) multilayer thin film were prepared by pulsed laser deposition (PLD) on the LaNiO3 (LNO) coated LaAlO3 (LAO) substrate. All the three kinds of films were characterized by XRD and atomic force microscope (AFM). XRD tests reveal that highquality [00l]oriented films are obtained.AFM results show that the grain size and root mean square (RMS) roughness of BST/BZT/BST sandwich film are similar to that of BST film and BZT film. Compared with BST and BZT film, the BST/BZT/BST film posses the highest figure of merit FOM (42.07), indicating the highly promising potential of BST/BZT/BST film for the application in tunable microwave device.

Key words: BST/BZT/BST film, thin films, dielectric constant, leakage current characteristics

CLC Number: 

  • TN305