Diffusion of Phase Boundary and Crystallization Behaviors for Tio2/SiO2 Composite Films

Abstract

Abstract: The crystallization behaviors of sol-gel TiO₂/SiO₂ composite films and the phase boundary diffusion of the film and the buffer layer were studied. 50TiO₂/50SiO₂
films annealed between 500℃ and 950℃ exhibited crytsallization in the anatase ad rutile phases. The structure of the thin film transformed from
amorphous state into anatase, and from anatase into rutile and induced the crystallization of SiO₂. For TiO₂/SiO₂ film deposited on a dense silica
and nano-porous SiO₂ surface, the diffusion of Ti can be observed in the nano-porous layer by AES. Between the film and the buffer layer carbon was also
observed by AES. SEM and EDS revealed the distribution of carbon in the thin film surface. With the increasing heat-treatment temperature in O₂ the conent of carbon decreased.

Key words: sol-gel, thin film, AES, diffusion, crystallization

CLC Number:

O484

ZHAI Ji-Wei,ZHANG Liang-Ying,LAO Xi. Diffusion of Phase Boundary and Crystallization Behaviors for Tio₂/SiO₂ Composite Films[J]. Journal of Inorganic Materials.

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Diffusion of Phase Boundary and Crystallization Behaviors for Tio₂/SiO₂ Composite Films

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