Abstract: iCN films were prepared by RF magnetron sputtering with SiC target. The influences of the basic
process parameters, such as the deposition power and partial pressure of nitrogen, on the deposition rate and optical properties were studied.
XPS and FTIR results revealed the formation of a complex network among Si, C and N. The deposition rate decreased with increasing partial
pressure of nitrogen. The increase of N flux resulted in wider optical gap. The higher the deposition power, the higher the deposition rate
and the narrower the optical band gap.

Key words: SiCN films, RF magnetron sputtering, FTIR, optical band gap