Journal of Inorganic Materials

• Research Paper • Previous Articles     Next Articles

Effects of Ag-Dopant on Dielectric Properties and Melting Behaviors of Bi2O3-ZnO-Nb2O5 (BZN)-Based Ceramics

WEI Jian-Zhong1; 2; CHEN Ren-Chang1; ZHANG Liang-Ying3; YAO Xi3   

  1. 1. EPA Center of Electronic Engineering Department; City University of Hongkong; China; 2. China Electronic Product Reliability and Environment Testing Research Institute; Guangzhou 510610; China; 3. Electronic Materials Research Laboratory, Xi'an Jiaotong University, Xi'an 710049, China
  • Received:2000-04-04 Revised:2000-06-09 Published:2001-03-20 Online:2001-03-20

Abstract: Cubic pyrochlore structure α phase and low symmetry structure β phase are the basic
phases of BZN-based ceramics. The α phase is a congruent compound, its congruent melting point is 1190℃, corresponding to negative
temperature coefficient of dielectric constant. The β phase is an incongruent compound, its incongruent melting point (peritectic temperature)
is 1100℃, corresponding to positive temperature coefficient. The zero temperature coefficient of CH grade would be met with fixed
α/β phase ratio. In this paper, dielectric properties of Ag-doped BZN-based α phase, β phase and CH grade diphasic ceramics were explored respectively. The results show the effects of Ag-dopant on the dielectric properties of BZN-based α phase,
β phase and CH grade diphasic ceramics. The melting behaviors of Ag-doped BZN-based β phase were explored too. The change of
incongruent melting point results in the change of the dielectric property of Ag-doped BZN-based ceramics.

Key words: Ag-dopant, pyrochlore structure, dielectric properties, melting behaviors

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