Characteristics of ZnO Single Crystal Grown by Seeded Chemical Chemical Vapor Transport Method

doi:10.3724/SP.J.1077.2007.00907

Abstract

Abstract:

ZnO single crystal with a diameter of 32mm, was grown by a seeded chemical vapor transport method. X-ray diffraction technique was used to evaluate the crystalline quality. The structure defects and optic properties of as-grown and annealed ZnO crystals were compared by Raman and photoluminescence measures. It is found that the growth direction is along c-axis and FWHM is 47arcsec and 78.4arcsec in the centre and at the edge of the crystal, respectively. Quality of the crystal is improved after annealing in oxygen ambience.

Key words: ZnO, chemical vapor transport method, X-ray rocking curve, Raman spectrum, photoluminescence

CLC Number:

O794

ZHANG Hua-Wei,SHI Er-Wei,CHEN Zhi-Zhan,YAN Cheng-Feng,CHEN Bo-Yuan. Characteristics of ZnO Single Crystal Grown by Seeded Chemical Chemical Vapor Transport Method
[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2007.00907.

References

[1] Robert F. Science, 1997, 276: 895--896.
[2] Tsukazaki A, Ohtomo A, Onuma T, et al. Nature Material, 2005, 4: 42--46.
[3] Nause J, Nemeth B. Semicond. Sci. Technol., 2005, 20: S45--S48.
[4] Ohshimaa E, Oginoa H, Niikura I, et al. J. Crys. Grow., 2004, 260: 166--170.
[5] Maeda K, Sato M, Niikura I. Semicond. Sci. Technol., 2005, 20: S49--S54.
[6] Hassani S, Tromson-Carij A, Lusson A, et al. Phys. Stat. Sol. (b), 2002, 229: 835--839.
[7] Grasza K, Mcelelskl A. Phys. Stat. Sol. (c), 2005, 2: 1115--1118.
[8] Look D C, Reynolds D C, Sizelove J R, et al. Solid State Communication, 1998, 105: 399--401.
[9] Li Xin-Hua, Xu Jia-Yue, Li Xiao-Min. Applied Physics A, 2005, 82: 373--376.
[10] Zhao Y, Dong Z, Wei X, et al. Chinese Journal of Semiconductors, 2006, 27: 336--339.
[11] Song C, Hang Y, Zhang C, XU J, et al. Journal of Synthetic Crystals, 2005, 34: 1083--1087.
[12] Tena-Zaera R, Mart\acute inez-Tom\acute as M C, Hassani S, et al. J. Crys. Growth, 2004, 270: 711--721.
[13] Fujimura N, Nishihara T, Goto S, et al. J. Cryst. Growth, 1993, 130: 269--272.
[14] Fan H J, Scholz R, Kolb M F, et al. Appl. Phys. A, 2004, 79: 1895--1900.
[15] Yang L W, Wu X L, Huang G S, et al. J. Appl. Phys., 2005, 97: 014308.
[16] Ozgǖr U, Alivov Y I, Liu C, et al. J. Appl. Phys., 2005, 98: 041301.
[17] Mo C M, Li Y H, Lin Y S, et al. J. Appl. Phys., 1998, 83: 4389--4391.
[18] Lin G, Yang S H, Yang C L, et al. Appl. Phys. Lett., 2000, 76: 2901--2903.
[19] 高相东, 李效民, 于伟东(Gao Xiang-Dong, et al). 无机材料学报(Journal of Inorganic Materials), 2005, 20 (4): 965--970.
[20] Vanheusden K, Seager C H, Warren W L, et al. J. Appl. Phys., 1996, 79: 7983--7990.
[21] Van Dijken A, Meulenkamp E A, Vanmaekelbergh D, et al. J. Phys. Chem. B, 2000, 104: 1715--1723.
[22] Kroger F A. The Chemistry of Imperfect Crystals. Amsterdam: North-Holland Publishing Company, 1964. 691.
[23] Studenikin S A, Golego N, Cocivra M. J. Appl. Phys., 1998, 84: 2287--2294.
[24] Minamit, Nanto H, Takata S. Thin Solid Films, 1983, 109: 379--384.