Enhanced Piezoelectric Properties of (1-x)(0.8PZT-0.2PZN)-xBZT Ceramics via Phase Boundary and Domain Engineering

doi:10.15541/jim20240463

Abstract

Abstract:

Pb(Zr,Ti)O₃-Pb(Zn_1/3Nb_2/3)O₃ (PZT-PZN) based ceramics, as important piezoelectric materials, have a wide range of applications in fields such as sensors and actuators, thus the optimization of their piezoelectric properties has been a hot research topic. This study investigated the effects of phase boundary engineering and domain engineering on (1-x)[0.8Pb(Zr_0.5Ti_0.5)O₃-0.2Pb(Zn_1/3Nb_2/3)O₃]-xBi(Zn_0.5Ti_0.5)O₃ ((1-x)(0.8PZT-0.2PZN)- xBZT) ceramic to obtain excellent piezoelectric properties. The crystal phase structure and microstructure of ceramic samples were characterized. The results showed that all samples had a pure perovskite structure, and the addition of BZT gradually increased the grain size. The addition of BZT caused a phase transition in ceramic samples from the morphotropic phase boundary (MPB) towards the tetragonal phase region, which is crucial for optimizing piezoelectric properties. By adjusting content of BZT and precisely controlling position of the phase boundary, the piezoelectric performance can be optimized. Domain structure is one of the key factors affecting piezoelectric performance. By using domain engineering techniques to optimize grain size and domain size, piezoelectric properties of ceramic samples have been significantly improved. Specifically, excellent piezoelectric properties (piezoelectric constant d₃₃=320 pC/N, electromechanical coupling factor k_p=0.44) were obtained simultaneously for x=0.08. Based on experimental results and theoretical analysis, influence mechanisms of phase boundary engineering and domain engineering on piezoelectric properties were explored. The study shows that addition of BZT not only promotes grain growth, but also optimizes the domain structure, enabling the polarization reversal process easier, thereby improving piezoelectric properties. These research results not only provide new ideas for the design of high-performance piezoelectric ceramics, but also lay a theoretical foundation for development of related electronic devices.

Key words: phase boundary, 0.8PZT-0.2PZN, domain engineering, piezoelectric property

CLC Number:

TB34

CHEN Xiangjie, LI Ling, LEI Tianfu, WANG Jiajia, WANG Yaojin. Enhanced Piezoelectric Properties of (1-x)(0.8PZT-0.2PZN)-xBZT Ceramics via Phase Boundary and Domain Engineering[J]. Journal of Inorganic Materials, 2025, 40(6): 729-734.

Figures/Tables 7

Fig. 1 XRD patterns of (1-x)(0.8PZT-0.2PZN)-xBZT ceramics

Fig. 2 SEM images (a-h) and average grain sizes (i) of (1-x)(0.8PZT-0.2PZN)-xBZT ceramics

Fig. 3 Microstructure (a) and element mappings (b-f) of (1-x)(0.8PZT-0.2PZN)-xBZT (x=0.08) ceramics

Fig. 4 P-E hysteresis loops (a), J-E curves (b) and variation trends of the remnant polarization Pr and coercive field Ec (c) for (1-x)(0.8PZT-0.2PZN)-xBZT ceramics at room temperature Colorful figures are available on website

Fig. 5 Room temperature out-of-plane height, amplitude, and phase images of (1-x)(0.8PZT-0.2PZN)-xBZT ceramics (a) x=0; (b) x=0.08; (c) x=0.14. Colorful figures are available on website

Fig. 6 Temperature dependence of εr and tanδ of (1-x)(0.8PZT-0.2PZN)-xBZT ceramics (a) x=0; (b) x=0.02; (c) x=0.04; (d) x=0.06; (e) x=0.08; (f) x=0.10; (g) x=0.12; (h) x=0.14. Colorful figures are available on website

Fig. 7 d33 and kp of (1-x)(0.8PZT-0.2PZN)-xBZT ceramics

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