Argon Ion Etching on Property of YBa2Cu3O7-x Thin Films Prepared by TFA-MOD Process

doi:10.15541/jim20190102

Abstract

Abstract:

An impurity layer composed by Ba-Cu-O heterogeneous phase and a-axis YBCO crystal grains exists on the surface of the YBCO film after high-temperature crystallization, due to the unique growth mechanism of the YBCO film prepared by the TFA-MOD method. For the research of zero resistance superconducting welding and conventional resistance welding, we etched the YBCO film with Ar ion, decreasing the thickness of the film and removing the impurity layer without destroying the superconductivity and crystal structure. The Raman spectroscopy and scanning electron microscopy were used to research the states of the film with difference etching time. The results showed that the surface impurity layer of the 1.3 μm YBCO film was about 220 nm. The YBCO film was still crystal and c-axis oriented, though over etching. After etching, the oxygen vacancy defects in the film increased, causing the decrease of superconducting transition and current carrying performance. It can be solved by oxygen-absorbing treatment.

Key words: YBCO film, impurity, etching, superconducting property

CLC Number:

TQ174

LUO Zhi-Yong, LIAO Chu-Jian, CAI Chuan-Bing, LIU Zhi-Yong, LI Min-Juan, LU Yu-Ming. Argon Ion Etching on Property of YBa₂Cu₃O_7-_x Thin Films Prepared by TFA-MOD Process[J]. Journal of Inorganic Materials, 2019, 34(12): 1279-1284.

Figures/Tables 7

Fig. 1 Raman spectra of samples with different etching time

Fig. 2 SEM images of samples with different etching time

Fig. 3 XRD patterns of samples with different etching time

Fig. 4 AFM scan near the boundary between the etched and unetched areas of the film after etching for 25 min (a) 2D and 3D scans; (b) Step curve

Fig. 5 Superconducting transition characteristics of samples with different etching time (a) T-R curves; (b) Transition width and initial transition temperature as a function of etching time

Fig. 6 The Jc curves of samples with different etching time were measured by induction method (a) No oxygen treatment was carried out after etching; (b) Oxygen treatment was carried out after etching; (c) Comparison image of Jc variation trend of oxygen-absorbing and non-oxygen-absorbing samples after etching for different time

Fig. 7 XRD (00l) peak position comparison image of oxygen- absorbing treatment and no oxygen-absorbing treatment samples after etched for different time (a) 25 min; (b) 33 min; (c) 41 min

References 18

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Argon Ion Etching on Property of YBa₂Cu₃O_7-_x Thin Films Prepared by TFA-MOD Process

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