Study on Phase Transition Property of Tungsten-doped Vanadium Dioxide Thin Film at Terahertz Range

doi:10.3724/SP.J.1077.2012.12131

Abstract

Abstract: Vanadium dioxide and tungsten-doped (W-doped) vanadium dioxide thin films deposited by aqueous Sol-Gel method were characterized with several different techniques (i.e. X-ray photoelectron spectroscope, atomic force microscope, X-ray diffraction), to determine their morphology and microstructure. Their metal-to-insulator (MIT) phase transition behavior in infrared spectral region (λ=4 μm) and terahertz (THz) spectral region (0.3–1.0 THz) were observed respectivele. The results demonstrate that the transmittance of W-doped VO₂ film at room temperature is visibly lower than that of undoped VO₂ film in both infrared and terahertz spectral region. The transition temperature of W-doped VO₂ film is also lower than that of undoped VO₂ film in the THz range. The MIT and structural phase transition (SPT) are observed during the phase transition of VO₂and W-doped VO₂, and an obvious change of peak position occurs in W-doped VO₂ film.

Key words: vanadium dioxide, infrared transmittance, terahertz, tungsten doped

CLC Number:

TB34

MAO Mao, HUANG Wan-Xia, ZHANG Ya-Xin, YAN Jia-Zhen, LUO Yi, SHI Qi-Wu, CAI Jing-Han. Study on Phase Transition Property of Tungsten-doped Vanadium Dioxide Thin Film at Terahertz Range[J]. Journal of Inorganic Materials, 2012, 27(8): 891-896.

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